Semiconductor Package

ABSTRACT

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit of priority to U.S.Nonprovisional application Ser. No. 14/952,920, which claims the benefitof priority to U.S. Provisional Application No. 62/085,257, filed Nov.27, 2014 and claims the benefit of priority to U.S. ProvisionalApplication No. 62/198,681, filed Jul. 30, 2015. The contents of the twoprovisional applications are incorporated herein by reference in theirentirety.

FIELD OF THE INVENTION

The invention relates to semiconductor packages. More particularly, itrelates to wafer level chip scale packages (WLCSP).

BACKGROUND OF THE INVENTION

In the semiconductor industry, the integration density within a die isgrowing rapidly. A die can include a huge amount of active and passiveelectronic devices so that a lot of functions can be performed withinthe die. The electronic devices are formed by semiconductormanufacturing processes on a silicon wafer. After the manufacturingprocesses of the electronic devices are finished, the wafer can beseparated into many dies. Each die may then go through packagingprocesses so that a protection package is formed outside the die. Thepackage for a die can also be an interface for connections between thedie and a printed circuit board. Typical applications for integratedcircuits include mobile phone systems, television systems, personalcomputer systems, and networking systems.

Many types of package have been developed, such as dual in-line pinpackage (DIP), quad flat package (QFP), ball grid array (BGA), and waferlevel chip scale package (WLCSP). A DIP has connection pins on twoparallel sides. DIPs usually use through-hole-mounting or sockets to beplaced on printed circuit boards. DIPs usually comprise insulatingmaterials filled around a metal lead frame.

A QFP usually has wing-like leads extending from four sides of thepackage. A QFP has connections only from the peripheral area of thepackage, so its pin count is limited. A BGA can use a whole surface toform an array of connections so that it can provide higher ball count.The length between the array of connections and the die is shorter,which is better for high speed signal transmission. A WLCSP can have apackaged device which is nearly the same size of a die. A WLCSP isgenerally smaller than a BGA package.

SUMMARY OF THE INVENTION

One objective of the invention is to provide a semiconductor device thathas a higher reliability.

Another objective of the invention is to provide a semiconductor devicethat has finer interconnection pitches than traditional BGA packages.

Still another objective of the invention is to provide a semiconductordevice that is cost effective in manufacturing.

According to one aspect of the invention, a semiconductor device isdisclosed. The semiconductor device comprises a first die, a second die,a molding material, and a redistribution structure.

The first die has an L1 side and an S1 side. The L1 side is longer thanthe S1 side. The L1 side is perpendicular to the S1 side. The first diecomprises L1 connection ends and S1 connection ends. The L1 connectionends are disposed on an active surface of the first die. The L1connection ends are substantially disposed along the L1 side. The S1connection ends are disposed on the active surface of the first die. TheS1 connection ends are substantially disposed along the S1 side.

The second die has an L2 side and an S2 side. The L2 side is longer thanthan the S2 side. The L2 side is perpendicular to the S2 side. Thesecond die comprises a first group of L2 connection ends, a second groupof L2 connection ends, and S2 connection ends. The L2 connection endsare substantially disposed along the L2 side.

The molding material covers the first die and the second die. Theredistribution structure has a first group of traces and a second groupof traces. The first group of traces is electrically connected betweenthe S1 connection ends and the first group of L2 connection ends. Thesecond group of traces is electrically connected between the L1connection ends and the second group of L2 connection ends.

The S1 side is parallel to the S2 side. No solder bumps are locatedbetween the first die and the redistribution structure. No solder bumpsare located between the second die and the redistribution structure.

According to another aspect of the invention, a semiconductor device isdisclosed. The semiconductor device comprises a first die, a second die,and a redistribution structure. The first die has an L1 side and an S1side. The L1 side is perpendicular to the S1 side. The first die has afirst active surface. The first die comprises an L1 connection area onthe first active surface. The L1 connection area is substantially alongthe L1 side. The first die comprises an S1 connection area on the firstactive surface. The S1 connection area is substantially along the S1side.

The second die has an L2 side and an S2 side. The second die has asecond active surface. The second die comprises an L2 connection area onthe second active surface. The L2 connection area is substantially alongthe L2 side. The L1 side is parallel to the L2 side. The redistributionstructure has a first group of traces and a second group of traces. Thefirst group of traces is electrically connected between the S1connection area and the L2 connection area. The second group of tracesis electrically connected between the L1 connection area and the L2connection area.

An average length of the second group of traces is shorter than that ofthe first group of traces. No solder bumps are located between the firstdie and the redistribution structure. No solder bumps are locatedbetween the second die and the redistribution structure. According tostill another aspect of the invention, a semiconductor device isdisclosed. The semiconductor device comprises a first die, a second die,a molding material, a redistribution structure, a first connectionstructure, and a second connection structure.

The first die has a first active surface. The first die has an A1 side,an A2 side, an A3 side, and an A4 side. The A1 side is parallel to theA3 side. The A2 side is parallel to the A4 side. The A2 side is longerthan the A1 side. The A1 side is along an A1 axis. The A3 side is alongan A3 axis.

The second die has a second active surface. The second die has a B1side, a B2 side, a B3 side, and a B4 side. The B1 side is parallel tothe B3 side. The B2 side is parallel to the B4 side. The B2 side islonger than the B1 side. The B1 side is along a B1 axis. The B3 side isalong a B3 axis.

The molding material covers the first die and the second die. The firstactive surface being connected to the redistribution structure throughthe first connection structure. The second active surface is connectedto the redistribution structure through the second connection structure.

The A1 axis intersects the second die. The A3 axis does not intersectthe second die. The B1 axis does not intersect the first die. The B3axis intersects the first die.

According to still another aspect of the invention, a semiconductordevice is disclosed. The semiconductor device comprises a first die, asecond die, a redistribution structure, a first connection structure,and a second connection structure.

The first die has a first active surface. The first die has an A1 side,an A2 side, an A3 side, and an A4 side. The A1 side is parallel to theA3 side. The A2 side is parallel to the A4 side. The A2 side is longerthan the A1 side. The A1 side is along an A1 axis. The A3 side is alongan A3 axis.

The second die has a second active surface. The second die has a B1side, a B2 side, a B3 side, and a B4 side. The B1 side is parallel tothe B3 side. The B2 side is parallel to the B4 side. The B2 side islonger than the B1 side. The B1 side is along a B1 axis. The B3 side isalong a B3 axis.

The first active surface is connected to the redistribution structurethrough the first connection structure. The second active surface isconnected to the redistribution structure through the second connectionstructure.

The A1 axis intersects the second die. The A3 axis intersects the seconddie. The B1 axis does not intersect the first die. The B3 axis does notintersect the first die. No solder bumps are located between the firstdie and the redistribution structure. No solder bumps are locatedbetween the second die and the redistribution structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows connections of a semiconductor package 100A;

FIG. 1B shows connections of a semiconductor package 100B according toanother embodiment;

FIG. 1C shows a bottom view of the processor 103;

FIG. 1D shows an embodiment of a semiconductor device 100D;

FIG. 1E shows connections between the redistribution layer and thememory modules;

FIG. 1F shows an example of the semiconductor package 100F;

FIG. 1G shows an embodiment of the semiconductor package 100G;

FIG. 2A shows connections on an active side of the processor;

FIG. 2B shows a structural relationship in a semiconductor package;

FIG. 2C shows examples of connection elements;

FIG. 2D shows an embodiment of a semiconductor package;

FIG. 2E shows an embodiment of the semiconductor package;

FIG. 2F shows an example of a connection between two dies;

FIG. 2G shows another semiconductor package containing two memorymodules;

FIG. 3A shows an embodiment of the semiconductor package;

FIG. 3B shows another embodiment of the semiconductor package;

FIG. 3C shows another embodiment of the semiconductor package;

FIG. 3D shows another embodiment of the semiconductor package;

FIG. 3E shows another embodiment of the semiconductor package;

FIG. 3F shows an active surface of a die;

FIG. 3G shows another embodiment of the semiconductor package;

FIG. 3H shows another embodiment of the semiconductor package;

FIG. 3I shows another embodiment of the semiconductor package;

FIG. 4 shows another embodiment of the semiconductor package;

FIG. 5 shows another embodiment of the semiconductor package;

FIG. 6 shows another embodiment of the semiconductor package;

FIG. 7 shows another embodiment of the semiconductor package;

FIG. 8A shows another embodiment of the semiconductor package;

FIG. 8B shows another embodiment of the semiconductor package;

FIG. 8C shows another embodiment of the semiconductor package;

FIG. 8D shows another embodiment of the semiconductor package;

FIG. 8E shows another embodiment of the semiconductor package;

FIG. 8F shows another embodiment of the semiconductor package;

FIG. 8G shows another embodiment of the semiconductor package;

FIG. 8H shows another embodiment of the semiconductor package;

FIG. 8I shows another embodiment of the semiconductor package;

FIG. 9A shows an embodiment of a connection element;

FIG. 9B shows another embodiment of a connection element;

FIG. 9C shows another embodiment of a connection element;

FIG. 9D shows another embodiment of a connection element;

FIG. 9E shows another embodiment of a connection element;

FIG. 9F shows another embodiment of a connection element;

FIG. 9G shows another embodiment of a connection element;

FIG. 10A shows an embodiment of a memory module;

FIG. 10B shows another embodiment of a memory module;

FIG. 10C shows another embodiment of a memory module;

FIG. 10D shows another embodiment of a memory module;

FIG. 10E shows another embodiment of a connection structure;

FIG. 10F shows another embodiment of a connection structure;

FIG. 10G shows another embodiment of a connection structure;

FIG. 10H shows another embodiment of a connection structure;

FIG. 10I shows another embodiment of a connection structure;

FIG. 11A shows an exemplary bottom view of a memory chip connected to aredistribution structure;

FIG. 11B shows another exemplary bottom view of a memory chip connectedto a redistribution structure;

FIG. 11C shows a cross sectional view along a cutting line 1111 a shownin FIG. 11B;

FIG. 11D shows a cross sectional view along a cutting line 1111 b shownin FIG. 11B;

FIG. 11E shows a connection structure;

FIG. 11F shows an embodiment of a semiconductor package;

FIG. 11G shows a top view of an embodiment of a memory module;

FIG. 11H shows a cross sectional view of the memory module of FIG. 11G;

FIG. 11I shows an active surface view of a die;

FIG. 12A shows a cross sectional view of an embodiment of asemiconductor package;

FIG. 12B shows an active surface view of a first die and a second die inFIG. 12A;

FIG. 13A shows an active surface view of a first die and a second die;

FIG. 13B shows a cross sectional view of a semiconductor package;

FIG. 14A shows an embodiment of a semiconductor device;

FIG. 14B shows another embodiment of a semiconductor device;

FIG. 14C shows another embodiment of a semiconductor device;

FIG. 14D shows another embodiment of a semiconductor device;

FIG. 14E shows another embodiment of a semiconductor device;

FIG. 14F shows a cross sectional view of a redistribution structure anda die;

FIG. 14G shows one step of a method for making a semiconductor device;

FIG. 14H shows next step of a method for making a semiconductor device;

FIG. 14I shows next step of a method for making a semiconductor device;

FIG. 14J shows next step of a method for making a semiconductor device;

FIG. 14K shows next step of a method for making a semiconductor device;

FIG. 14L shows next step of a method for making a semiconductor device;

FIG. 14M shows next step of a method for making a semiconductor device;

FIG. 14N shows next step of a method for making a semiconductor device;

FIG. 14O shows next step of a method for making a semiconductor device;

FIG. 14P shows next step of a method for making a semiconductor device;

FIG. 14Q shows next step of a method for making a semiconductor device;

FIG. 14R shows next step of a method for making a semiconductor device;

FIG. 14S shows next step of a method for making a semiconductor device;

FIG. 14T shows next step of a method for making a semiconductor device;

FIG. 14U shows next step of a method for making a semiconductor device;

FIG. 14V shows next step of a method for making a semiconductor device;

FIG. 14W shows next step of a method for making a semiconductor device;

FIG. 14X shows next step of a method for making a semiconductor device;

FIG. 14Y shows next step of a method for making a semiconductor device;

FIG. 15A shows next step of a method for making a semiconductor package;

FIG. 15B shows next step of a method for making a semiconductor package;

FIG. 15D shows next step of a method for making a semiconductor package;

FIG. 15C shows next step of a method for making a semiconductor package;

FIG. 15D shows next step of a method for making a semiconductor package;

FIG. 15E shows next step of a method for making a semiconductor package;

FIG. 15F shows next step of a method for making a semiconductor package;

FIG. 15G shows next step of a method for making a semiconductor package;

FIG. 15H shows next step of a method for making a semiconductor package;

FIG. 15I shows next step of a method for making a semiconductor package;

FIG. 15J shows next step of a method for making a semiconductor package;

FIG. 15K shows next step of a method for making a semiconductor package;

FIG. 15L shows next step of a method for making a semiconductor package;

FIG. 15M shows next step of a method for making a semiconductor package;

FIG. 15N shows next step of a method for making a semiconductor package;

FIG. 15O shows next step of a method for making a semiconductor package;

FIG. 15P shows next step of a method for making a semiconductor package;

FIG. 16A shows next step of a method for making a semiconductor package;

FIG. 16B shows next step of a method for making a semiconductor package;

FIG. 16C shows next step of a method for making a semiconductor package;

FIG. 16D shows next step of a method for making a semiconductor package;

FIG. 16E shows next step of a method for making a semiconductor package;

FIG. 16F shows next step of a method for making a semiconductor package;

FIG. 16G shows next step of a method for making a semiconductor package;

FIG. 16H shows next step of a method for making a semiconductor package;

FIG. 16I shows next step of a method for making a semiconductor package;

FIG. 16J shows next step of a method for making a semiconductor package;

FIG. 16K shows next step of a method for making a semiconductor package;

FIG. 16L shows next step of a method for making a semiconductor package;

FIG. 16M shows next step of a method for making a semiconductor package;

FIG. 17A shows an embodiment of a semiconductor device;

FIG. 17B shows another embodiment of a connection structure;

FIG. 17C shows another embodiment of a connection structure;

FIG. 17D shows another embodiment of a connection structure;

FIG. 17E shows another embodiment of a connection structure;

FIG. 17F shows another embodiment of a semiconductor device;

FIG. 17G shows another embodiment of a connection structure;

FIG. 18A shows a back surface view of two dies placed on aredistribution structure;

FIG. 18B shows a cross sectional view of two dies placed on aredistribution structure;

FIG. 18C shows an embodiment of a connection structure;

FIG. 18D shows another embodiment of a connection structure;

FIG. 18E shows a back surface view of two dies placed on aredistribution structure;

FIG. 18F shows another back surface view of two dies placed on aredistribution structure;

FIG. 18G shows another back surface view of two dies placed on aredistribution structure;

FIG. 18H shows a cross sectional view of two dies placed on aredistribution structure;

FIG. 18I shows an embodiment of a connection structure;

FIG. 18J shows another embodiment of a connection structure;

FIG. 18K shows a back surface view of two dies placed on aredistribution structure;

FIG. 18L shows another back surface view of two dies placed on aredistribution structure;

FIG. 18M shows a cross sectional view of two dies placed on aredistribution structure;

FIG. 18N shows a back surface view of two dies placed on aredistribution structure;

FIG. 18O shows another back surface view of two dies placed on aredistribution structure;

FIG. 18P shows a cross sectional view of two dies placed on aredistribution structure;

FIG. 19A shows another cross sectional view of two dies placed on aredistribution structure;

FIG. 19B shows an embodiment of a connection structure;

FIG. 19C shows another embodiment of a connection structure;

FIG. 19D shows an embodiment of a connection structure;

FIG. 19E shows another embodiment of a connection structure;

FIG. 19F shows a cross sectional view of a semiconductor device;

FIG. 19G shows another cross sectional view of a semiconductor device;

FIG. 19H shows a cross sectional view of two dies placed on aredistribution structure;

FIG. 19I shows an embodiment of a processor comprising a memorycontroller;

FIG. 19J shows an embodiment of a connection structure;

FIG. 19K shows another embodiment of a connection structure;

FIG. 19L shows another embodiment of a connection structure;

FIG. 19M shows another embodiment of a connection structure;

FIG. 20A shows one step of a method for manufacturing a memory module;

FIG. 20B shows next step of a method for manufacturing a memory module;

FIG. 20C shows next step of a method for manufacturing a memory module;

FIG. 20D shows next step of a method for manufacturing a memory module;

FIG. 20E shows next step of a method for manufacturing a memory module;

FIG. 20F shows next step of a method for manufacturing a memory module;

FIG. 20G shows next step of a method for manufacturing a memory module;

FIG. 20H shows next step of a method for manufacturing a memory module;

FIG. 20I shows next step of a method for manufacturing a memory module;

FIG. 20J shows next step of a method for manufacturing a memory module;

FIG. 20K shows next step of a method for manufacturing a memory module;

FIG. 20L shows next step of a method for manufacturing a memory module;

FIG. 20M shows next step of a method for manufacturing a memory module;

FIG. 20N shows an embodiment of a semiconductor device;

FIG. 20O shows another embodiment of a semiconductor device;

FIG. 20P shows another embodiment of a semiconductor device;

FIG. 20Q shows another embodiment of a semiconductor device;

FIG. 20R shows another embodiment of a semiconductor device;

FIG. 20S shows one step of a method for manufacturing a memory module;

FIG. 20T shows next step of a method for manufacturing a memory module;

FIG. 20U shows next step of a method for manufacturing a memory module;

FIG. 21A shows an embodiment of a semiconductor device;

FIG. 21B shows another embodiment of a semiconductor device;

FIG. 21C shows another embodiment of a semiconductor device;

FIG. 21D shows an example of two adjacent conductive traces;

FIG. 21E shows another example of two adjacent conductive traces;

FIG. 22A shows an example of direct metal bonding;

FIG. 22B shows another example of direct metal bonding;

FIG. 22C shows another example of direct metal bonding;

FIG. 22D shows another example of direct metal bonding;

FIG. 22E shows another example of direct metal bonding;

FIG. 22F shows another example of direct metal bonding;

FIG. 23A shows an embodiment of a semiconductor device;

FIG. 23B shows an example of a via;

FIG. 23C shows another example of a via;

FIG. 23D shows another example of a via;

FIG. 23E shows another example of a via;

FIG. 23F shows another example of a via;

FIG. 23G shows a comparison among a plurality of vias;

FIG. 23H shows an embodiment of a semiconductor device;

FIG. 23I shows another embodiment of a semiconductor device;

FIG. 23J shows another embodiment of a semiconductor device;

FIG. 23K shows another embodiment of a semiconductor device;

FIG. 23L shows another embodiment of a semiconductor device;

FIG. 23M shows another embodiment of a semiconductor device;

FIG. 23N shows another embodiment of a semiconductor device;

FIG. 23O shows another embodiment of a semiconductor device;

FIG. 24A shows an exemplary via 2400A;

FIG. 24B shows an embodiment of two dies placed on a redistributionstructure; and

FIG. 24C shows an embodiment of a semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1A shows connections of a semiconductor package 100A. Referring toFIG. 1A, a semiconductor package 100A is disclosed. In some embodiments,the semiconductor package 100A comprises a redistribution layer (RDL)104. The RDL 104 has a first side 101 and a second side 107. Thesemiconductor package 100A can have a processor 103.

The processor 103 has an active side 106 and a back side 102. The activeside 106 is directly connected to the first side 101 of theredistribution layer 104 and no solder connections are located betweenthe redistribution layer 104 and the processor 103. The semiconductorpackage 100A has a memory module 108 connected to the redistributionlayer 104 through solder connections 105. In some embodiments, thememory module 108 is a Wide IO memory.

FIG. 1B shows connections of a semiconductor package 100B according toanother embodiment. In this embodiment, the semiconductor package 100Bhas a plurality of metal vias 110 connecting to the RDL 104. Signals canbe transmitted from the processor 103, through the RDL 104, and then tothe metal vias 110. Signals can also be transmitted from the metal vias110, through the RDL 104, and then to the processor 103.

Referring to FIG. 1B, in one embodiment, the semiconductor package 100Bcomprises redistribution layer 104, a processor 103, and a memory module108. In one embodiment, The redistribution layer 104 has a first sideand a second side. The processor 103 having an active side 101 and aback side 102. The active side 101 is directly connected to the firstside 106 of the redistribution layer 104 and no solder connections arelocated between the redistribution layer 104 and the processor 103. Thememory module 108 is connected to the redistribution layer 104 throughsolder connections. The memory module 104 is a Wide IO memory.

FIG. 1C shows a bottom view of the processor 103. FIG. 1D shows anembodiment of a semiconductor device 100D. With reference to FIG. 1C andFIG. 1D, in one embodiment, the semiconductor device 100D comprises aprocessor 103, a redistribution layer 104, a first memory module 120,and a second memory module 119. The processor 103 has a first group ofIO connections 115 and a second group of IO connections 111. The firstgroup of IO connections 115 is closer to a central point 114 of theprocessor 103 than the second group of IO connections 111. Theredistribution layer 104 is connected to the processor 103.

The redistribution layer 104 comprises a first group of traces 118 and asecond group of traces 116. The first group of traces 118 iselectrically connected to the first group of IO connections 115. Thesecond group of traces 116 is electrically connected to the second groupof IO connections 111. The first memory module 120 is electricallyconnected to the processor 103 through the first group of traces 118.The second memory module 119 is electrically connected to the processor103 through the second group of traces 116.

In one example, the first memory module 120 is a Wide IO memory module.In one example, the second memory module 119 is an LPDDR memory module.In one example, the first memory module 120 is connected to theredistribution layer 104 through a first connection structure 122 on abottom side of the redistribution layer 104. In one example, the secondmemory module 119 is connected to the redistribution layer 104 through asecond connection structure 124 on a peripheral zone 121 of theredistribution layer 104. In one example, a number of connections in thefirst connection structure 122 is more than a number of connections inthe second connection structure 124.

In one embodiment, The semiconductor device 100D comprises a processor103, a redistribution layer 104, a first memory module 120, and a secondmemory module 119. The processor 103 has a first group of IO connections115 and a second group of IO connections 111. The redistribution layer104 is connected to the processor 103. The redistribution layer 104comprises a first group of traces 118 and a second group of traces 116.

The first group of traces 118 is electrically connected to the firstgroup of IO connections 115. The second group of traces 116 iselectrically connected to the second group of IO connections 111. Thefirst memory module 120 is electrically connected to the processor 103through the first group of traces 115. The second memory module 119 iselectrically connected to the processor 103 through the second group oftraces 116. A number of the first group of IO connections 115 is greaterthan a number of the second group of IO connections 111. In one example,the first memory module 120 is a Wide IO memory module. In one example,the second memory module 119 is an LPDDR memory module.

In FIG. 1C, the bottom view of the processor 103 shows the active sideof the processor 103. The processor 103 has a first group of IOconnections 115 and a second group of IO connections 111. The firstgroup of IO connections 115 are closer to a central point 114 of theprocessor 103 than the second group of IO connections 111.

With reference to FIG. 1D, the redistribution layer 104 is connected tothe processor 103. In some embodiments, the redistribution layer 104comprises a first group of traces 118 and a second group of traces 116.

The first group of traces 118 are electrically connected to the firstgroup of IO connections 115. The second group of traces 116 areelectrically connected to the second group of IO connections 111. Amemory module 108 is electrically connected to the processor 103 throughthe first group of traces 118. In some embodiments, another memorymodule 119 is electrically connected to the processor 102 through thesecond group of traces 116. In one example, the memory module 120 is aWide IO memory module. In one example, the memory module 119 is an LPDDRmemory module.

FIG. 1E shows connections between the redistribution layer and thememory modules. The memory module 119 is connected to a peripheral zone121 of the redistribution layer 104 through a connection structure 124.A central zone 123 of the memory module 119 is not connected to theredistribution layer 104. The memory module 120 is connected to theredistribution layer 104 through a connection structure 122 on a bottomside 125 of the redistribution layer 104.

In some embodiments, a number of connections in the first connectionstructure 122 is more than a number of connections in the secondconnection structure 124. For example, when the memory module 120 is aWide IO memory module and the the memory module 119 is an LPDDR memorymodule, the number of connections for the Wide IO memory module is morethan the number of connections for the LPDDR memory module.

In some embodiments, the peripheral zone 121 is connected to aperipheral zone 126 of the memory module 119. A connection zone 127 isconnected to a connection zone 128 of the memory module 120 through thefirst connection structure 122. In some embodiments, an area of theconnection zone 128 is greater than an area of the peripheral zone 126of the memory module 106 so that the connection zone 128 can providemore area for larger number of IO connections.

FIG. 1F shows an example of the semiconductor package 100F. Withreference to FIG. 1E and FIG. 1F, the connection structure 122 can be aplurality of solder balls 105. The connection structure 124 can be aplurality of metal vias 110 and a plurality of solder balls 129.

FIG. 1G shows an embodiment of the semiconductor package 100G. Thesemiconductor package 100G has a processor 103, a memory module 108, anda memory module 119. The processor 103 is connected to a redistributionlayer (RDL) 104. The RDL 104 is made by fan-out wafer level packagingtechnology. The RDL 104 can have multiple layers so that it can providespace for metal traces to redistribute in it. The metal traces in theRDL can help to transmit signals and power/ground connections from or tothe processor 103. The semiconductor package 100G has multiple metalvias 110 connecting to the RDL 104. The active side of the processor 103is connected to the RDL 104, so the processor 103 may need metal vias110 to help to transmit signals to the back side of the processor 103.

A molding material 109 may be used to encapsulate the processor 103. Thememory module 119 is attached onto the metal vias through solder balls129. The memory module 119 could be an LPDDR memory module. The memorymodule 108 is connected to the RDL 104 through a connection structure105. The memory module 108 can be a Wide IO memory module. Theconnection structure 105 can be solder balls. The solder balls for theconnection structure 105 are smaller than the solder balls 129. Thesemiconductor package 100G can be attached onto a printed circuit board120 through solder balls 130.

FIG. 2A shows connections on an active side of the processor. FIG. 2Bshows a structural relationship in a semiconductor package. FIG. 2Cshows examples of connection elements. FIG. 2D shows an embodiment of asemiconductor package. With reference to FIG. 2A, FIG. 2C, and FIG. 2D,a semiconductor package 200D is disclosed. The semiconductor package200D comprises a processor 202, a connection structure CSS, a connectionstructure CSL, a memory module 204. The connection structure CSScomprises a plurality of connection elements CES. The connectionstructure CSS is connected to a central zone CZ of an active side of theprocessor 202.

The connection structure CSL comprises a plurality of connectionelements CEL. The connection structure CSL is connected to a peripheralzone PZ of the active side of the processor 202. An active side of thememory module 204 is connected to the connection structure CSS. Thememory module 204 and the processor 202 are face-to-face connected. Apath length PS of the connection elements CES is shorter than a pathlength PL of each of the connection elements CEL. In some embodiments,the connection elements CEL can be metal vias. In some embodiments, theconnection elements CES can be solder balls.

FIG. 2E shows an embodiment of the semiconductor package. With referenceto FIG. 2D and FIG. 2E, in some embodiments, the semiconductor package200D comprises a memory chip 205, a processor chip 203, a connectionstructure 224, and a connection structure 226. The memory chip having205 has a passivation layer 228. The passivation layer 228 has aplurality of connection openings 230. Only one connection opening 230 isshown in FIG. 2E, but it is noted that there can be a pluralityconnection openings 230 in the passivation layer 228. The processor chip203 has a passivation layer 232. The passivation layer 232 has aplurality of connection openings 234 and connection openings 236.

The connection structure 226 comprises a metal pillar 238 and a solderlayer 240. The metal pillar 238 is connected to at least one of thepassivation openings 230. The solder layer 240 is connected to at leastone of the second passivation openings 234. The connection structure 236comprises a metal via 242. The metal via 242 is connected to at leastone of the connection openings 236. In some embodiments, a height of themetal via 242 is longer than a height of of the metal pillar 238. Insome embodiments, an area of at least one of the connection openings 234is smaller than an area of at least one of the connection openings 236.

FIG. 2F shows an example of a connection between two dies. Withreference to FIG. 2F, a first die 245 and a second die 251 can beconnected through a first metal pillar 247, a second metal pillar 249,and a solder bump 248. The first metal pillar 247 is connected to anfirst UBM (under bump metallization) structure 244. The second metalpillar 249 is connected to a second UMM structure 253. The first UBMstructure 244 is connected to a first pad 243. The first pad 243 islocated on the first die 245. The second UBM structure 253 is connectedto a second pad 252. The second pad is located on the second die 251. Afirst passivation layer 246 is located on the first die 245. A secondpassivation layer 250 is located on the second die 251. The first metalpillar 247 has a first height 254 and the second metal pillar 249 has asecond height 255. In one example, the first height 254 is substantiallythe same as the second height 255. In one example, the first height 254is greater than the second height 255.

FIG. 2G shows another semiconductor package containing two memorymodules. The semiconductor package 200G has a processor 202, a memorymodule 204, and a memory module 218. The memory module 204 and theprocessor 202 are connected face-to-face. An active side of theprocessor 202 and an active side of the memory module 204 are directlyconnected through a connection structure 216.

The connection structure can contain a plurality of solder balls. Thesemiconductor package 200 can further comprise a redistribution layer(RDL) 210 and a redistribution layer (RDL) 208. A plurality of metalvias 212 are connected both to the RDL 210 and the RDL 208. The RDL 210can have a plurality of sublayers so that it can provide space for metaltraces to redistribute in it. The RDL 208 can have a plurality ofsublayers so that it can provide space for metal traces to redistributein it. The memory module 218 is connected to the RDL 210 through solderballs 220. The semiconductor package 200 can be further connected to aprinted circuit board 206.

With reference to FIG. 2A, FIG. 2B, FIG. 2C, and FIG. 2D, in oneembodiment, a partial structure of the semiconductor package 200Dcomprises a processor 202, a first connection structure CSL, a secondconnection structure CSS, and a first memory module 204. The firstconnection structure CSL comprises a plurality of first connectionelements CEL.

The first connection structure CSL is connected to a first zone PZ of anactive side of the processor 202. The second connection structure CSScomprises a plurality of second connection elements CES. The secondconnection structure CSS is connected to a second zone CZ of the activeside of the processor 202. An active side of the first memory module 204is connected to the second connection structure CSS. The first memorymodule 204 and the processor 202 are face-to-face connected. A pathlength PL of each of the first connection elements CEL is longer than apath length PS of each of the second connection elements CES.

In one example, the first memory module 204 is a Wide I/O memory module.In one example, the first connection elements CEL are metal vias. In oneexample, the second connection elements CES are solder balls. In oneexample, the semiconductor package 200D further comprises a secondmemory module 210. The second memory module is connected to the metalvia 212. In one example, the second memory module 210 is an LPDDRmemory. In one example, the semiconductor package 200D further comprisesa molding material 214 surrounding the processor 204.

With reference to FIG. 2E, in one embodiment, a partial structure of thesemiconductor package 200D comprises a first memory chip 205, aprocessor chip 203, a first connection structure 224, and a secondconnection structure 226. The first memory chip 205 has a firstpassivation layer 228. The first passivation layer 228 has a pluralityof first connection openings 230. The processor chip 203 has a secondpassivation layer 232. The second passivation layer 232 has a pluralityof second connection openings 234 and third connection openings 236. Thefirst connection structure 224 comprises a metal pillar 238 and a solderlayer 240. The metal pillar 238 is connected to at least one of thefirst passivation openings 230. The solder layer 240 is connected to atleast one of the second passivation openings 234. The second connectionstructure 226 comprises a metal via 242. The metal via 242 is connectedto at least one of the third connection openings 236. A height of themetal via 242 is longer than a height of of the metal pillar 238. Anarea of at least one of the second connection openings 234 is smallerthan an area of at least one of the third connection openings 236.

FIG. 3A shows an embodiment of the semiconductor package. FIG. 3B showsan embodiment of the semiconductor package. FIG. 3C shows an embodimentof the semiconductor package. FIG. 3D shows an embodiment of thesemiconductor package. FIG. 3E shows an embodiment of the semiconductorpackage. FIG. 3F shows an active surface of a die. FIG. 3G shows anembodiment of the semiconductor package. FIG. 3H shows an embodiment ofthe semiconductor package. With reference to FIG. 3A, the semiconductorpackage 300A comprises a processor 302, a memory module 304, aredistribution layer 308, a redistribution layer 306, and metal vias310. The redistribution layer 306 can be connected to a memory module316 through connection elements 318.

The redistribution layer 308 can be connected to a printed circuit board314. In some embodiments, the redistribution layer 308 can be connectedto a substrate. The redistribution layer 306 can have multiple sublayersso that it can provide space for routings of metal traces. Theredistribution layer 308 can have multiple sublayers so that it canprovide space for routings of metal traces.

The processor 302 can access the memory module 304 through the metaltraces in the redistribution layer 308, the metal vias 310, and themetal traces in the redistribution layer 306. The processor 302 canaccess the memory module 316 through the metal traces in theredistribution layer 308, the metal vias 310, the metal traces in theredistribution layer 306, and the connection elements 318. In someembodiments, the memory module 304 can be a Wide IO memory. In someembodiments, the memory module 316 can be an LPDDR memory module. Amolding material 312 can be filled between the redistribution layer 306and the redistribution layer 308.

In one embodiment, a semiconductor package 300B comprises a first die323, a second die 327, a first redistribution structure 324, a secondredistribution structure 326, and a metal via 325.

The first die 323 has a first active surface 331 and a first non-activesurface 330. The first active surface 331 faces a first direction 322.The second die 327 has a second active surface 332 and a secondnon-active surface 333. The second active surface 332 faces a seconddirection 328. The first direction 322 is opposite to the seconddirection 328. The first redistribution structure 324 is connected tothe first active surface 331 of the first die 323.

The first redistribution structure 324 comprises a first metal trace321. The second redistribution structure 326 is connected to the activesurface 332 of the second die 327. The second redistribution structure326 comprises a second metal trace 329. The metal via 325 has a firstend 334 and a second end 335. The first end 334 of the metal via 325 isconnected to the first redistribution structure 324. The second end 335of the metal via is connected to the second redistribution structure326.

The first end 334 of the metal via 325 is connected to the first activesurface 331 of the first die 323 through the first metal trace 321. Thesecond end 335 of the metal via 325 is connected to the second activesurface 332 of the second die 327 through the second metal trace 329. Nosolder bumps are located between the first redistribution structure 324and the first die 323 and no solder bumps are located between the secondredistribution structure 326 and the second die 327.

In one example, the semiconductor package further comprises a moldingmaterial 336 filled between the first non-active surface 330 of thefirst die 323 and the second non-active surface 333 of the second die327.

In one example, the metal via 325 is a first metal via 325 and thesemiconductor package 300B further comprises a second metal via 337. Thesecond metal via 337 has a third end 338 and a fourth end 339. The thirdend 338 of the second metal via 337 is connected to the firstredistribution structure 324. The fourth end 339 of the second metal via337 is connected to the second redistribution structure 326. The secondmetal via 337 is on a same side of the first 323 and the second dies 327as the first metal via 325.

In one example, the first die 323 has a first side 340 and a second side341, The first end 334 of the first metal via 325 is connected to thefirst redistribution structure 324 at a first position 342. The thirdend of the second metal via 337 is connected to the first redistributionstructure 324 at a third position 344. The first distance between thefirst position 342 and the first side 340 of the first die 323 isshorter than a second distance between the third position 344 and thefirst side 340 of the first die 323.

In one example, the first die 323 has a central area 345, a side area346, and a central location 347. The first metal trace 321 is connectedto the first die 323 at a first location 345 on the side area 346.

In one example, the first redistribution structure 324 comprises asecond metal trace 350. The second metal trace 350 is connected betweenthe third end 338 of the second metal via 337 and a second location 349on the side area 346. A third distance between the first location 349 ofthe side area 346 and the central location 347 of the first die 323 isgreater than a fourth distance between the second location 348 of theside area 346 and the central location 347 of the first die 323.

In one example, the semiconductor package 300B further comprises aplurality of solder bumps 351 formed on the first redistributionstructure 324. In one example, the semiconductor package 300B furthercomprises a plurality of solder bumps 352 formed on the secondredistribution structure 326.

In one example, the semiconductor package 300B further comprises aplurality of metal vias 353, the metal vias 353 being connected to thefirst redistribution structure 324 at a plurality of connectionpositions 354, the connection positions 354 substantially surroundingthe side area 346 of the first die 323.

In one embodiment, a semiconductor package 300H comprises a first die323, a second die 327, a first redistribution structure 324, a secondredistribution structure 326, and a metal via 325.

The first die 323 has a first active surface 331 and a first non-activesurface 330. The first active surface 331 faces a first direction 332.The second die 327 has a second active surface 332 and a secondnon-active surface 333. The second active surface 332 faces a seconddirection 328. The first direction 322 is opposite to the seconddirection 328. The first redistribution structure 324 is connected tothe first active surface 331 of the first die 323. The firstredistribution structure 324 comprises a first metal trace 321.

The second redistribution structure 236 is connected to the activesurface 332 of the second die 327. The second redistribution structure326 comprises a second metal trace 329. The metal via 325 has a firstend 334 and a second end 335. The first end 334 of the metal via 325 isconnected to the first redistribution structure 324. The second end 335of the metal via 325 is connected to the second redistribution structure326. The first end 334 of the metal via 325 is connected to the firstactive surface 331 of the first die 324 through the first metal trace321. The second end 335 of the metal via 325 is connected to the secondactive surface 332 of the second die 327 through the second metal trace329.

A plurality of solder bumps 355 are located between the firstredistribution structure 324 and the first die 323. No solder bumps arelocated between the second redistribution structure 326 and the seconddie 327.

In one embodiment, a semiconductor package 300I comprises a first die323, a second die 327, a first redistribution structure 324, a secondredistribution structure 326, and a metal via 325.

The first die 323 has a first active surface 331 and a first non-activesurface 330. The first active surface 331 faces a first direction 322.

The second die 327 has a second active surface 332 and a secondnon-active surface 333. The second surface 332 faces a second direction328. The first direction 322 is opposite to the second direction 328.

The first redistribution structure 324 is connected to the first activesurface 331 of the first die 323. The first redistribution structure 324comprises a first metal trace 321. The second redistribution structure326 is connected to the active surface 332 of the second die 327. Thesecond redistribution structure 326 comprises a second metal trace 329.The metal via 325 has a first end 334 and a second end 335. The firstend 334 of the metal via 325 is connected to the first redistributionstructure 324. The second end 335 of the metal via 325 is connected tothe second redistribution structure 326. The first end 334 of the metalvia 325 is connected to the first active surface 331 of the first die323 through the first metal trace 321. The second end 335 of the metalvia 325 is connected to the second active surface 332 of the second die327 through the second metal trace 329.

A plurality of solder bumps 355 are located between the firstredistribution structure 324 and the first die 323. A plurality ofsolder bumps 356 are located between the second redistribution structure326 and the second die 327.

FIG. 4 shows an embodiment of the semiconductor package. Thesemiconductor package 400 comprises a processor 402, a memory module404, a memory module 406, a redistribution layer 408, a redistributionlayer 410, metal vias 412. The processor 410 is connected to theredistribution layer 410. The memory module 404 is connected to theredistribution layer 408.

The memory module 406 is connected to the redistribution layer 408. Thememory module 404 and the memory module 406 can be located side by side.The metal vias are connected between the redistribution layer 408 andthe redistribution layer 410. The memory module 404 and the memorymodule 406 can be the same type of memory. For example, the memorymodule 406 and the memory module 408 can both be Wide IO memories. Theredistribution layer 408 can be further connected to a memory module 418through connection elements 420.

The memory module 410 can be further connected to a printed circuitboard 416 through connection elements 422. In some embodiments, thememory module 410 can be connected to a substrate. The memory module 418can be an LPDDR memory. The processor 402 can access the memory module404 and the memory module 406 through the redistribution layer 410, themetal vias 412, and the redistribution layer 408. The processor can alsoaccess the memory module 418 through the redistribution layer 410, themetal vias 412, the redistribution layer 408, and the connectionelements 420.

FIG. 5 shows an embodiment of the semiconductor package. Thesemiconductor package 500 comprises a processor 502, a memory module504, a redistribution layer 506, a redistribution layer 508, and metalvias 510. The processor 502 is connected to the redistribution layer506.

The memory module 504 is connected to the redistribution layer 506. Inthis embodiment, the processor 502 and the memory module 504 aredisposed side by side. The communication between the processor 502 andthe memory module can be made through metal traces in the redistributionlayer 506. The redistribution layer 506 can be further connected to amemory module 516 through connection elements 518. In some embodiments,the memory module 504 is a Wide IO memory. In some embodiments, thememory module 518 is an LPDDR memory.

A molding material 512 can be filled between the redistribution layer506 and the redistribution layer 508. The redistribution layer 508 canbe further connected to a printed circuit board 514 through connectionelements 520. In some embodiments, the redistribution layer 508 can beconnected to a substrate. The processor 502 can access the memory module504 through metal traces in the redistribution layer 506. The processor502 can also access the memory module 516 through the metal traces inthe redistribution layer 506 and the connection elements 518.

FIG. 6 shows an embodiment of the semiconductor package. Thesemiconductor package 600 comprises a processor 602, a memory module602, a memory module 604, a redistribution layer 607, a redistributionlayer 608, a redistribution layer 616, metal vias 610, connectionelements 618, and connection elements 620.

The processor 602 is connected to the redistribution layer 608. Themetal vias are connected between the redistribution layer 607 and theredistribution layer 608. The redistribution layer 607 is connected tothe redistribution layer 616 through the connection elements 618. Theredistribution layer 608 can be further connected to the printed circuitboard 614 through the connection elements 620. In some embodiments, thethe redistribution layer 608 can be connected to the printed circuitboard 614. In some embodiments, the memory module 604 and the memorymodule 606 are Wide IO memories.

In some embodiments, the memory module 604 and the memory module 606 areLPDDR memories. In some embodiments, the memory module 604 is a Wide IOmemory and the memory module 606 is an LPDDR memory. The processor 602can access the memory module 602 and the memory module 604 through theredistribution layer 608, the metal vias 610, the redistribution layer607, the connection elements 618, and the redistribution layer 616. Amolding material 622 can be filled between the redistribution layer 607and the redistribution layer 608. A molding material 612 can be used toencapsulate the memory module 604 and the memory module 606.

FIG. 7 shows an embodiment of the semiconductor package. Thesemiconductor package 700 comprises a memory module 702, a memory module703, a memory module 704, a memory module 706, a redistribution layer708, metal vias 710, and connection elements 718. The memory module 702is connected to the redistribution layer 708. The memory module 703 isconnected to the redistribution layer 708. The memory module 704 can bea die. The memory module 706 can be another die. The memory module 704and the memory module 706 can be stacked on a substrate 716. The memorymodule 704 and the memory module 706 can communicate with the substrate716 through bonding wires 726.

The substrate 716 is connected to the metal vias 710 through theconnection elements 718. The redistribution layer 708 can be furtherconnected to a printed circuit board 714. In some embodiments, theredistribution layer 708 can be connected to another substrate. In someembodiments, the redistribution layer 708 can be connected to anotherredistribution layer. In some embodiments, the memory module 702 and thememory module 703 are Wide IO memories. In some embodiments, the memorymodule 704 and the memory module 706 are LPDDR memories.

FIG. 8A shows an embodiment of the semiconductor package. FIG. 8B showsan embodiment of the semiconductor package. In one embodiment, asemiconductor package 800A comprises a first redistribution structure8140, a second redistribution structure 8141, a plurality of metal vias8150, a first connection structure 8146, a second connection structure8147, a third connection structure 8148, a fourth connection structure8149, a processor 8142, a memory interface die 8143, a first memory die8144, and a second memory die 8145. The plurality of metal vias 8150 areconnected between the first redistribution structure 8140 and the secondredistribution structure 8141. A processor 8142 is connected to thefirst redistribution structure 8140 through the first connectionstructure 8146.

The memory interface die 8143 is connected to the second redistributionstructure 8141 through the second connection structure 8147. The firstmemory die 8144 is connected to the second redistribution structure 8141through the third connection structure 8148. The second memory die 8145is connected to the second redistribution structure 8141 through thefourth connection structure 8149. A first data bus 8153 is formedbetween the processor 8142 and the memory interface die 8143. A seconddata bus 8154 is formed between the memory interface die 8143 and thefirst memory die 8144. A third data bus 8155 is formed between thememory interface die 8143 and the second memory die 8145.

In one example, a plurality of solder bumps 8173 are connected to thefirst redistribution structure. In one example, a molding material 8151is filled between the first redistribution structure 8140 and the secondredistribution structure 8141. In one example, a molding material 8152is disposed between the memory interface die 8143 and the first memorydie 8144. In one example, a molding material 8152 is disposed betweenthe memory interface die 8143 and the second memory die 8145.

In one example, no data bus is formed between the first memory die 8144and the processor 8142. In one example, no data bus is formed betweenthe second memory die 8145 and the processor 8142. In one example, thefirst connection structure 8146 does not have a solder bump. In oneexample, the second connection structure 8147 does not have a solderbump.

In one example, the third connection structure 8148 does not have asolder bump. In one example, the fourth connection structure 8149 doesnot have a solder bump. In one example, the first data bus 8153 has afirst bus width, the second data bus 8154 has a second bus width, thethird data bus 8155 has a third data width, and the second bus width isdifferent from the third bus width. In one example, a first activesurface of the processor 8142, a second active surface of the firstmemory die 8144, and a third active surface of the second memory die8145, face a same direction 8169.

FIG. 8E shows an embodiment of the semiconductor package. Thesemiconductor package 800E comprises a processor 801, a memory module802, a memory module 803, a redistribution layer 804, a redistributionlayer 805, metal vias 807. The metal vias 807 are electrically connectedto the redistribution layer 804 and the redistribution layer 805. Themetal vias can help to transmit signals or power levels between theredistribution layer 804 and the redistribution layer 805.

An active side of the processor 801 is connected to the redistributionlayer 804 through a connection structure 810. The connection structure810 help to connect IO pads of the processor 801 to metal traces in theredistribution layer 804. In some embodiments, the connection structure810 does not contain a solder material. An active side of the memorymodule 802 is connected to the redistribution layer 805 through aconnection structure 811. The connection structure 811 help to connectIO pads of the memory module 802 to metal traces in the redistributionlayer 805. In some embodiments, the connection structure 811 does notcontain a solder material.

With reference to FIG. 8E, an active side of the memory module 803 isconnected to the redistribution layer 805 through a connection structure812. The connection structure 812 help to connect IO pads of the memorymodule 803 to metal traces in the redistribution layer 805. In someembodiments, the connection structure 812 does not contain a soldermaterial. In some embodiments, a molding material 809 is disposed on aside of the redistribution layer 804. The molding material 809 surroundsfour side walls of the processor 801. In some embodiments, the moldingmaterial 809 does not cover a non-active side of the processor 801.

In some embodiments, a molding material 808 is filled between theredistribution layer 804 and the redistribution layer 805. In someembodiments, the molding material 808 surrounds four side walls of thememory module 802 and four side walls of the memory module 803. In someembodiments, the molding material 808 does not cover a non-active sideof the memory module 802. In some embodiments, the molding material 808does not cover a non-active side of the memory module 803.

In some embodiments, no metal vias are embedded in the molding material809. The processor 801 can access the memory module 802 through theredistribution layer 804, the metal vias 807, the redistribution layer805, and the connection structure 811. The processor 801 can access thememory module 803 through the redistribution layer 804, the metal vias807, the redistribution layer 805, and the connection structure 812.

With reference to FIG. 8E, in some embodiments, the non-active side ofthe memory module 802 is not electrically connected to theredistribution layer 805. In some embodiments, the non-active side ofthe memory module 803 is not electrically connected to theredistribution layer 805. In some embodiments, the non-active side ofthe processor 801 is not electrically connected to the redistributionlayer 804. In some embodiments, a plurality of connection elements 806are connected to the redistribution layer 805 so that the redistributionlayer 805 can further connect to a printed circuit board through theconnection elements 806.

FIG. 8F shows an embodiment of the semiconductor package. FIG. 8G showsan embodiment of the semiconductor package. FIG. 8H shows an embodimentof the semiconductor package. With reference to FIG. 8F, the moldingmaterial 809 covers the non-active side of the processor 801 but themolding material 808 does not cover the non-active side of the memorymodule. In some embodiments, no metal vias are embedded in the moldingmaterial 809. In some embodiments, metal vias can be embedded in themolding material 809. With reference to FIG. 8G, the molding material809 does not cover the non-active side of the processor 801 but themolding material 808 covers the non-active side of the memory module.

In some embodiments, no metal vias are embedded in the molding material809. In some embodiments, metal vias can be embedded in the moldingmaterial 809. With reference to FIG. 8H, the molding material 809 coversthe non-active side of the processor 801 and the molding material 808covers the non-active side of the memory module. In some embodiments, nometal vias are embedded in the molding material 809. In someembodiments, metal vias can be embedded in the molding material 809.

FIG. 8I shows an embodiment of the semiconductor package. A plurality ofmetal vias 812 are embedded in the molding material 809. The metal vias812 are electrically connected to the redistribution layer 804. In someembodiments, a plurality of connection elements 813 are electricallyconnected to the metal vias 812. The connection elements 812 can befurther connected to another redistribution layer, a substrate, orprinted circuit board.

FIG. 8C shows an embodiment of the semiconductor package. FIG. 8D showsan embodiment of the semiconductor package. In one embodiment, asemiconductor package 800C comprises a first redistribution structure8156, a second redistribution structure 8157, a plurality of metal vias8164, a first connection structure 8161, a second connection structure8162, a third connection structure 8163, a processor 8158, a firstmemory die 8159, and a second memory die 8160. The plurality of metalvias 8164 are connected between the first redistribution structure 8156and the second redistribution structure 8157. The processor 8158 isconnected to the first redistribution structure 8156 through the firstconnection structure 8161.

The first memory die 8159 is connected to the second redistributionstructure 8157 through the second connection structure 8162. The secondmemory die 8160 is connected to the second redistribution structure 8157through the third connection structure 8163. A first data bus 8167 isformed between the processor 8158 and the first memory die 8159. Asecond data bus 8168 is formed between the first memory die 8159 and thesecond memory die 8160.

In one example, a plurality of solder bumps 8173 are connected to thefirst redistribution structure 8156. In one example, a molding material8171 is filled between the first redistribution structure 8156 and thesecond redistribution structure 8157. In one example, a molding material8166 is disposed between the first memory die 8159 and the second memorydie 8160. In one example, no data bus is formed between the secondmemory die 8160 and the processor 8153.

In one example, the first connection structure 8161 does not have asolder bump. In one example, the second connection structure 8162 doesnot have a solder bump. In one example, the third connection structure8163 does not have a solder bump. In one example, the first data bus8167 has a first bus width, the second data bus 8168 has a second buswidth, and the first bus width is different from the second bus width.In one example, a first active surface 8172 of the processor 8158, asecond active surface 8173 of the first memory die 8159, and a thirdactive surface 8174 of the second memory die 8160, face a same direction8169.

FIG. 9A shows an embodiment of a connection element. The connectionelement 900A comprises a first metal layer 901, a second metal layer902, a solder ball 903. The first metal layer 901 can comprise Ni(Nickel). The second metal layer 902 can comprise Au (Gold). Theconnection element 900A is located on an active surface AS of a chip906. The active surface AS comprises a passivation layer 904, and ametal pad 905. The metal pad 905 can comprise A1 (Aluminium). In oneembodiment, the passivation layer can comprise silicon dioxide (SiO2).In one embodiment, the passivation layer can comprise silicon nitride(SiN).

FIG. 9B shows an embodiment of a connection element. The connectionelement 900B comprises a solder ball 912, and an under bumpmetallization layer 910 (UBM layer 910). The UBM layer 910 is connectedto a metal pad 908. The connection element 900B is located on an activesurface AS of a chip 907. The active surface AS of the chip 907comprises a passivation layer 909 and a metal pad 908. The solder ball912 can contain Sn, Ni, Au, Ag, Pb, Bi, and alloys thereof. The UBMlayer 910 can comprise multiple layers of selectively plated Ni/Au,Ti/Cu, TiW/Cu, Ti/Cu/NiV/Cu, or their combination. The metal pad cancontain Al or Cu.

FIG. 9C shows an embodiment of a connection element. The connectionelement 900C comprises a solder ball 912, and an under bumpmetallization layer 910 (UBM layer 910). The UBM layer 910 is connectedto a metal pad 908. The connection element 900C is located on an activesurface AS of a chip 907. The active surface AS of the chip 907comprises a passivation layer 909, an insulating layer 913, and a metalpad 908. The solder ball 912 may comprise Sn, Ni, Au, Ag, Pb, Bi, oralloys thereof. The UBM layer 910 may comprise multiple layers ofselectively plated Ni/Au, Ti/Cu, TiW/Cu, Ti/Cu/NiV/Cu, or theircombination. The metal pad 908 may comprise A1 or Cu. The insulatinglayer 913 may comprise polyimide, benzocyclobutene (BCB),polybenzoxazoles (PBO), or other material having similar insulating andstructural properties.

FIG. 9D shows an embodiment of a connection element. The connectionelement 900D comprises a solder ball 912, and an under bumpmetallization layer 910 (UBM layer 910). The UBM layer 910 is connectedto a metal pad 908. The connection element 900D is located on an activesurface AS of a chip 907. The active surface AS of the chip 907comprises a passivation layer 909, an insulating layer 913, and a metalpad 908. The solder ball 912 may comprise Sn, Ni, Au, Ag, Pb, Bi, oralloys thereof. The UBM layer 910 may comprise multiple layers ofselectively plated Ni/Au, Ti/Cu, TiW/Cu, Ti/Cu/NiV/Cu, or theircombination. The metal pad 908 may comprise Al or Cu. The insulatinglayer 913 may comprise polyimide, benzocyclobutene (BCB),polybenzoxazoles (PBO), or other material having similar insulating andstructural properties.

FIG. 9E shows an embodiment of a connection element. The connectionelement 900E comprises a solder ball 912, and an under bumpmetallization layer 910 (UBM layer 910). The UBM layer 910 is connectedto a metal pad 908. The connection element 900E is located on an activesurface AS of a chip 907. The active surface AS of the chip 907comprises a passivation layer 909, a first insulating layer 913, asecond insulating layer 914, and the metal pad 908.

The solder ball 912 may comprise Sn, Ni, Au, Ag, Pb, Bi, or alloysthereof. The UBM layer 910 may comprise multiple layers of selectivelyplated Ni/Au, Ti/Cu, TiW/Cu, Ti/Cu/NiV/Cu, or their combination. Themetal pad 908 may comprise A1 or Cu. The insulating layer 913 maycomprise polyimide, benzocyclobutene (BCB), polybenzoxazoles (PBO), orother material having similar insulating and structural properties. Theinsulating layer 914 may comprise polyimide, benzocyclobutene (BCB),polybenzoxazoles (PBO), or other material having similar insulating andstructural properties.

FIG. 9F shows an embodiment of a connection element. The connectionelement 900F comprises a solder ball 919 and a redistribution structure922. The connection element 900F is located on an active surface AS of achip 915. The active surface AS of the chip 915 comprises a passivationlayer 917 and a metal pad 916. The redistribution structure 922comprises a first insulating layer 918, and a second insulating layer921. A via 923 is formed on top of the metal pad 916. A metal trace 920is connected to the via 923. The metal trace 920 also connects to thesolder ball 919. In one embodiment, no USB is presented under the solderball 919.

The solder ball 919 may comprise Sn, Ni, Au, Ag, Pb, Bi, or alloysthereof. The metal pad 916 may comprise A1 or Cu. The first insulatinglayer 918 may comprise polyimide, benzocyclobutene (BCB),polybenzoxazoles (PBO), or other material having similar insulating andstructural properties. The second insulating layer 921 may comprisepolyimide, benzocyclobutene (BCB), polybenzoxazoles (PBO), or othermaterial having similar insulating and structural properties.

FIG. 9G shows an embodiment of a connection element. The connectionelement 900G comprises a solder ball 919 and a redistribution structure922. The connection element 900F is located on an active surface AS of achip 915. The active surface AS of the chip 915 comprises a passivationlayer 917 and a metal pad 916. The redistribution structure 922comprises an UBM 922, a first insulating layer 918, and a secondinsulating layer 921. A via 923 is formed on top of the metal pad 916. Ametal trace 920 is connected to the via 923. The metal trace 920 alsoconnects to the solder ball 919. The USB 922 is presented under thesolder ball 919.

The solder ball 919 may comprise Sn, Ni, Au, Ag, Pb, Bi, or alloysthereof. The metal pad 916 may comprise Al or Cu. The first insulatinglayer 918 may comprise polyimide, benzocyclobutene (BCB),polybenzoxazoles (PBO), or other material having similar insulating andstructural properties. The second insulating layer 921 may comprisepolyimide, benzocyclobutene (BCB), polybenzoxazoles (PBO), or othermaterial having similar insulating and structural properties.

FIG. 10A shows an embodiment of a memory module. FIG. 10B shows anembodiment of a memory module. FIG. 10C shows an embodiment of a memorymodule. FIG. 10D shows an embodiment of a memory module. FIG. 10E showsan embodiment of a connection structure. FIG. 10F shows an embodiment ofa connection structure. FIG. 10H shows an embodiment of a connectionstructure. FIG. 10I shows an embodiment of a connection structure.

Referring to FIG. 10A, a memory module 1000A is disclosed. The memorymodule 1000 a comprises a DRAM die 1001, a DRAM die 1002, aredistribution structure 1003, a redistribution structure 1004, and aconductive via 1005. FIG. 10G shows an embodiment of a connectionstructure.

The DRAM die 1001 has an active surface AS and a non-active surface NAS.The DRAM die 1002 has an active surface AS and a non-active surface NAS.The active surface AS of the DRAM die 1001 is connected to theredistribution structure 1003. The active surface AS of the DRAM die isconnected to the redistribution structure 1004. The conductive via 1005is connected between the redistribution structure 1003 and theredistribution structure 1004. The active surface AS of the DRAM die1001 faces a direction D1. The active surface AS of the DRAM die 1002faces a direction D2. The direction D1 is opposite to the direction D2.

Referring to FIG. 10C, in one example, a plurality of solder bumps 1007are located between the active surface AS of the DRAM die 1001 and theredistribution structure 1003. Referring to FIG. 10C, in one example, nosolder bumps are located between the active surface AS of the DRAM die1002 and the redistribution structure 1004.

Referring to FIG. 10H, in one example, a plurality of solder bumps 1009are located between the active surface AS of the DRAM die 1002 and theredistribution structure 1004. In one example, no solder bumps arelocated between the active surface AS of the DRAM die 1001 and theredistribution structure 1003.

Referring to FIG. 10A, in one example, the memory module 1000A furthercomprises a molding material 1010 filled between the redistributionstructure 1003 and the redistribution structure 1004. In one example,the memory module 1000 a further comprises a plurality of solder bumps1011 located on an outer surface OS of the redistribution layer 1003.

Referring to FIG. 10I, in one example, the memory module 1000A furthercomprises a plurality of conductive base structures 1012. The conductivebase structure 1012 is located on an inner surface IS of theredistribution layer 1003. The conductive base structure 1012 isconnected to the conductive via 1005.

With reference to FIG. 10A and FIG. 10E, an embodiment of the memorymodule 1000A is disclosed. The memory module 1000A comprises a DRAM die1001, a DRAM die 1002, a connection structure 1013, a connectionstructure 1014, a redistribution structure 1003, a redistributionstructure 1004, and a plurality of metal vias 1005. The DRAM die 1001has an active surface AS and a non-active surface NAS. The DRAM die 1002has an active surface AS and a non-active surface NAS. The connectionstructure 1013 comprises a group of metal pillars 1006.

With reference to FIG. 10G, in one embodiment, the connection structure1014 comprises a group of metal pillars 1008. The active surface AS ofthe DRAM die 1001 is connected to the redistribution structure 1003through the connection structure 1013. The active surface AS of the DRAMdie 1002 is connected to the redistribution structure 1004 through theconnection structure 1014. The conductive vias 1005 are connectedbetween the redistribution structure 1003 and the redistributionstructure 1004. The DRAM die 1001 has a first storage space. The DRAMdie 1002 has a second storage space. In one embodiment, the firststorage space is the same as the second storage space.

An embodiment of the memory module 1000A is disclosed. The memory modulecomprises a DRAM die 1001, a DRAM die 1002, a molding material 1010, aconnection structure 1013, a connection structure 1014, a redistributionstructure 1003, a redistribution structure 1004, and a plurality ofconductive vias 1005. The DRAM die 1001 has an active surface AS and anon-active surface NAS. The DRAM die 1002 has an active surface AS and anon-active surface NAS. The connection structure 1013 comprises a firstgroup of metal pillars 1006. The connection structure 1014 comprises agroup of metal pillars 1014.

The active surface AS of the DRAM die 1001 is connected to theredistribution structure 1003 through the connection structure 1013. Themolding material 1010 is filled between the active surface AS of theDRAM die 1001 and the redistribution structure 1003. The active surfaceAS of the DRAM die 1002 is connected to the redistribution structure1004 through second connection structure 1014. The molding material 1010is filled between the active surface AS of the DRAM die 1002 and theredistribution structure 1004. The conductive vias 1005 are connectedbetween the redistribution structure 1003 and the redistributionstructure 1004.

With reference to FIG. 10A, in one embodiment, a memory module 1000Acomprises a first DRAM die 1001, a second DRAM die 1002, a firstredistribution structure 1003, a second redistribution structure 1004,and a conductive via 1005. The first DRAM die 1001 has an active surfaceAS and a non-active surface NAS. The second DRAM die 1002 has an activesurface AS and a non-active surface NAS. The active surface AS of thefirst DRAM die 1001 is connected to the first redistribution structure1003.

The active surface AS of the second DRAM die 1002 is connected to thesecond redistribution structure 1004. The conductive via 1005 isconnected between the first redistribution structure 1003 and the secondredistribution structure 1004. The active surface AS of the first DRAMdie 1001 faces a first direction D1. The active surface AS of the secondDRAM die 1002 faces a second direction D2. The first direction D1 isopposite to the second direction D2. In one example, no solder bumps arelocated between the active surface AS of the first DRAM die 1001 and thefirst redistribution structure 1003.

In one example, with reference to FIG. 10C, a plurality of solder bumps1015 are located between the active surface AS of the first DRAM die1001 and the first redistribution structure 1003. In one example, nosolder bumps are located between the active surface AS of the secondDRAM die 1002 and the second redistribution structure 1004.

With reference to FIG. 10B, in one example, a plurality of solder bumps1016 are located between the active surface AS of the second DRAM die1002 and the second redistribution structure 1004. In one example, thememory module 1000A further comprises a molding material 1010 filledbetween the first redistribution structure 1003 and the secondredistribution structure 1004.

In one example, the memory module 1000A further comprises a plurality ofsolder bumps 1011 located on an outer surface OS of the firstredistribution layer 1003. In one example, the memory module 1000Afurther comprises a plurality of conductive base structures 1012, theconductive base structures 1012 being located on an inner surface IS ofthe first redistribution layer, the conductive base structure 1012 isconnected to the conductive via 1005.

With reference to FIG. 10A, in one embodiment, the memory module 1000Acomprises a first DRAM die 1001, a second DRAM die 1002, a firstconnection structure 1013, a second connection structure 1014, a firstredistribution structure 1003, and a second redistribution structure1004. The first DRAM die 1001 has an active surface AS and a non-activesurface NAS. The second DRAM die 1002 has an active surface AS and anon-active surface NAS. The first connection structure 1013 comprises afirst group of metal pillars 1006. The second connection structurecomprises a second group of metal pillars 1008. The active surface AS ofthe first DRAM die 1001 is connected to the first redistributionstructure 1003 through the first connection structure 1013. The activesurface of the second DRAM die 1002 is connected to the secondredistribution structure 1004 through the second connection structure1014. The conductive vias 1005 is connected between the firstredistribution structure 1003 and the second redistribution structure1004. The first DRAM die 1001 has a first storage space. The second DRAMdie 1002 has a second storage space. The first storage space is the sameas the second storage space.

With reference to FIG. 10A, in one embodiment, the memory module 1000Acomprises a first DRAM die 1001, a second DRAM die 1002, a moldingmaterial 1010, a first connection structure 1013, a second connectionstructure 1014, a first redistribution structure 1003, a secondredistribution structure 1004, and a plurality of conductive vias 1005.The first DRAM die 1001 has an active surface AS and a non-activesurface NAS. The second DRAM die 1002 has an active surface AS and anon-active surface NAS. The first connection structure 1013 comprises afirst group of metal pillars 1006. The second connection structure 1014comprises a second group of metal pillars 1008. The active surface AS ofthe first DRAM die 1001 is connected to the first redistributionstructure 1003 through the first connection structure 1013. The moldingmaterial 1010 is filled between the active surface AS of the first DRAMdie 1001 and the first redistribution structure 1003.

The active surface AS of the second DRAM die 1002 is connected to thesecond redistribution structure 1004 through the second connectionstructure 1014. The molding material 1010 is filled between the activesurface AS of the second DRAM die 1002 and the second redistributionstructure 1004. The conductive vias 1005 are connected between the firstredistribution structure 1003 and the second redistribution structure1004.

FIG. 11A shows an exemplary bottom view of a memory chip connected to aredistribution structure. FIG. 11B shows an exemplary bottom view of amemory chip connected to a redistribution structure. FIG. 11C shows across sectional view along a cutting line 1111 a shown in FIG. 11B. FIG.11D shows a cross sectional view along a cutting line 1111 b shown inFIG. 11B. FIG. 11E shows a connection structure. FIG. 11F shows anembodiment of a semiconductor package. FIG. 11G shows a top view of anembodiment of a memory module. FIG. 11H shows a cross sectional view ofthe memory module of FIG. 11G. FIG. 11I shows an active surface view ofa die.

Referring to FIG. 11A, FIG. 11B, FIG. 11C, FIG. 11D, and FIG. 11E, inone embodiment, a memory module 1100A is disclosed. The memory module1100A comprises a memory chip 1115, a connection structure 1114, aredistribution structure 1112, a first group of conductive vias 1113 a,a second group of conductive vias 1113 b, a third group of conductivevias 1113 c, and a fourth group of conductive vias 1113 d. The memorychip 1115 comprises a first quadrant 1101, a second quadrant 1102, athird quadrant 1103, and a fourth quadrant 1104.

Each quadrant has a channel. The redistribution structure 1112 isconnected to the memory chip 1115 through the connection structure 1114.The redistribution structure 1112 comprises a first group of metaltraces 1105, a second group of metal traces 1106, a third group of metaltraces 1107 and a fourth group of metal traces 1108. The first group ofconductive vias 1103 a are electrically connected to the first quadrant1101 through the first group of metal traces 1105.

The second group of conductive vias 1113 b are electrically connected tothe second quadrant 1102 through the second group of metal traces 1106.The third group of conductive vias 1113 c are electrically connected tothe third quadrant 1103 through the third group of metal traces 1107.The fourth group of conductive vias 1113 d are electrically connected tothe fourth quadrant 1104 through the fourth group of metal traces 1108.The first group of metal traces 1105 is substantially symmetric to thesecond group of metal traces 1106 with respect to a first plane 1109.The third group of metal traces 1107 are substantially symmetric to thefourth group of metal traces 1108 with respect to the first plane 1109.

Referring to FIG. 11A, FIG. 11B, FIG. 11C, FIG. 11D, and FIG. 11E, inone embodiment, a memory module 1100A is disclosed. The memory module1100A comprises a memory chip 1115, a connection structure 1114, and aredistribution structure 1112. The memory chip 1100 ac comprises a firstquadrant 1101, a second quadrant 1102, a third quadrant 1103, and afourth quadrant 1104. Each quadrant has a channel. Each quadrant has anL side and an S side. A length of the L side is greater than a length ofthe S side in a quadrant. In each quadrant, the L side is along a firstaxis A1, and the S side is along a second axis A2. The redistributionstructure 1112 is connected to the memory chip 1115 through theconnection structure 1114.

The redistribution structure 1112 comprises a first group of metaltraces 1105, a second group of metal traces 1106, a third group of metaltraces 1107, and a fourth group of metal traces 1108. A majority of thefirst group of metal traces 1105 are routed substantially in parallelwith the second axis A2. A majority of the second group of metal traces1106 are routed substantially in parallel with the second axis A2. Amajority of the third group of metal traces 1108 are routedsubstantially in parallel with the second axis A2. A majority of thefourth group of metal traces 1108 are routed substantially in parallelwith the second axis A2.

Referring to FIG. 11A, FIG. 11B, FIG. 11C, FIG. 11D, FIG. 11E, FIG. G,and FIG. H, in one embodiment, a memory module 1100G is disclosed. Thememory module 1100G comprises a first memory die D1, a second memory dieD2 a third memory die D3, a fourth memory die D4, a connection structure1114, a redistribution structure 1112, and a plurality of conductivevias 1113. The first memory die D1 comprises a first quadrant 1101. Thefirst memory die D1 having a first inner corner C1.

The first inner corner C1 is formed by an a first L side L1 and a firstS side S1. The second memory die D2 comprises a second quadrant 1102.The second memory die D2 has a second inner corner C2. The second innercorner C2 is formed by a second L side L2 and a second S side S2. Thethird memory die D3 comprises a third quadrant 1103. The third memorydie D3 has a third inner corner C3. The third inner corner C3 is formedby a third L side L3 and a third S side S3. The fourth memory die D4comprises a fourth quadrant 1104.

The fourth memory die D4 has a fourth inner corner C4. The fourth innercorner C4 is formed by a fourth L side L4 and a fourth S side S4. Theredistribution structure 1112 is connected to the first memory die D1,the second memory die D2, the third memory die D3, and the fourth memorydie D4 through the connection structure 1014. The conductive vias 1113are connected to the redistribution structure 1112 at a central area CA.The central area CA is substantially surrounded by the first L side L1,the first S side S1, the second L side L2, the second S side S2, thethird L side L3, the third S side S3, the fourth L side L4, and thefourth S side S4.

With reference to FIG. 11A, FIG. 11B, FIG. 11C, and FIG. 11D, in oneembodiment, the memory module 1100A comprises a memory chip 1115, aconnection structure 1114, a redistribution structure 1112, a firstgroup of conductive vias 1113 a, a second group of conductive vias 1113b, a third group of conductive vias 1113 c, and a fourth group ofconductive vias 1113 d.

The memory chip 1115 comprises a first quadrant 1101, a second quadrant1102, a third quadrant 1103, and a fourth quadrant 1104. Each quadrantcomprises a channel. The redistribution structure 1112 is connected tothe memory chip 1115 through the connection structure 1114. Theredistribution structure 1112 comprises a first group of metal traces1105, a second group of metal traces 1106, a third group of metal traces1107 and a fourth group of metal traces 1108. The first group ofconductive vias 1113 a is electrically connected to the first quadrant1101 through the first group of metal traces 1105.

The second group of conductive vias 1113 b are electrically connected tothe second quadrant 1102 through the second group of metal traces 1106.The third group of conductive vias 1113 c are electrically connected tothe third quadrant 1103 through the third group of metal traces 1107.The fourth group of conductive vias 1113 d are electrically connected tothe fourth quadrant 1104 through the fourth group of metal traces 1108.The first group of metal traces 1105 is substantially symmetric to thesecond group of metal traces 1106 with respect to a first plane 1109.The third group of metal traces 1107 is substantially symmetric to thefourth group of metal traces 1108 with respect to the first plane 109.

With reference to FIG. 11A, FIG. 11B, FIG. 11C, and FIG. 11D, in oneembodiment, the memory module 1100A comprises a memory chip 1115, aconnection structure 1114, and a redistribution structure 1112. Thememory chip 1115 comprises a first quadrant 1101, a second quadrant1102, a third quadrant 1103, and a fourth quadrant 1104. Each quadrantcomprises a channel Each quadrant has an L side and an S side. A lengthof the L side is greater than a length of the S side. The L side is inparallel with a first axis A1. The S side is in parallel with a secondaxis A2. The redistribution structure 1112 is connected to the memorychip 1115 through the connection structure 1114.

The redistribution structure 1112 comprises a first group of metaltraces 1105, a second group of metal traces 1106, a third group of metaltraces 1107, and a fourth group of metal traces 1108. A majority of thefirst group of metal traces 1105 are routed substantially in parallelwith the second axis A2. A majority of the second group of metal traces1106 are routed substantially in parallel with the second axis A2. Amajority of the third group of metal traces 1107 are routedsubstantially in parallel with the second axis A2. A majority of thefourth group of metal traces 1108 are routed substantially in parallelwith the second axis A2.

With reference to FIG. 11G and FIG. 11H, in one embodiment, a memorymodule 1100G comprises a first memory die D1, a second memory die D2, athird memory die D3, a fourth memory die D4, a connection structure1114, a redistribution structure 1112, and a plurality of conductivevias 1113. The first memory die D1 comprises a first quadrant 1101. Thefirst memory die D1 has a first inner corner C1.

The first inner corner C1 is formed by an a first L side L1 and a firstS side S1. The second memory die D2 comprises a second quadrant 1102.The second memory die has a second inner corner C2. The second innercorner is formed by a second L side L2 and a second S side S2. The thirdmemory die D3 comprises a third quadrant 1103. The third memory die D3has a third inner corner C3. The third inner corner C3 is formed by athird L side L3 and a third S side S3. The fourth memory die D4comprises a fourth quadrant 1104.

The fourth memory die D4 has a fourth inner corner C4. The fourth innercorner C4 is formed by a fourth L side L4 and a fourth S side S4. Theredistribution structure 1112 is connected to the first memory die D1,the second memory die D2, the third memory die D3, and the fourth memorydie D4 through the connection structure 1114. The plurality ofconductive vias 1113 connect to the redistribution structure 1112 at acentral area CA. The central area CA is substantially surrounded by thefirst L side L1, the first S side S1, the second L side L2, the second Sside S2, the third L side L3, the third S side S3, the fourth L side L4,and the fourth S side S4.

With reference to FIG. 11I, a die 1116 has a first I/O zone 1118, asecond I/O zone 1120. A plurality of first I/O ends 1122 are located onthe first I/O zone 1118. A plurality of second I/O ends 1123 are locatedon the second I/O zone 1120. The die 1116 has a central line 1119. Afirst distance 1121 is defined as a distance between the first I/O zone1118 and the central line 1119. A second distance 1117 is defined as adistance between the first I/O zone 1118 and an I/O side 1124 of the die1116. In one example, the second distance 1117 is smaller than the firstdistance 1121.

FIG. 12A shows a cross sectional view of an embodiment of asemiconductor package. FIG. 12B shows an active surface view of a firstdie and a second die in FIG. 12A.

With reference to FIG. 12A, in one embodiment, a semiconductor package1200A comprises a first die 1202, a second die 1204, a redistributionstructure 1208, a first group of traces 1209, a second group of traces1206, and a group of inter die connection traces 1207. The first die1202 is electrically connected to the redistribution structure 1208. Thesecond die 1204 is electrically connected to the redistributionstructure 1208. The first group of traces 1209 is embedded in theredistribution structure 1208. Each of the first group of traces 1209 isconnected to the first die and not connected to the second die 1204. Thesecond group of traces 1206 is embedded in the redistribution structure1208.

Each of the second group of traces 1206 is connected to the second die1204 and not connected to the first die 1202. The group of inter dieconnection traces 1207 are embedded in the redistribution structure1208. The first die 1202 and the second die 1204 are electricallyconnected by the group of inter die connection traces 1207. A number ofthe inter die connection traces 1207 is greater than a number of tracesin the first group 1209. A number of the inter die connection traces1207 is greater than a number of the traces in the second group 1206.

With reference to FIG. 12A, in one embodiment, a semiconductor package1200A comprises a first die 1202, a second die 1204, a redistributionstructure 1208, a group of inter die traces 1207, The first die 1202 hasa first side 1212 and a second side 1219. The first side 1212 is longerthan the second side 1219. The first die 1212 comprises a plurality offirst I/O connections 1210. The plurality of first I/O connections 1210are located substantially along the first side 1212. The second die 1204has a third side 1213 and a fourth side 1220. The third side 1213 islonger than the fourth side 1220.

The second die comprises a plurality of second I/O connections 1215. Theplurality of second I/O connections are located substantially along thethird side 1213. The inter die traces 1207 are embedded in theredistribution structure 1208. Each of the inter die traces 1207 iselectrically connected to the first die 1202 and is electricallyconnected to the second die 1204. No solder bump is located between atleast one of the inter die traces 1207 and the first die 1202. No solderbump is located between at least one of the inter die traces 1207 andthe second die 1204.

FIG. 13A shows an active surface view of a first die and a second die.FIG. 13B shows a cross sectional view of a semiconductor package.

In one embodiment, a semiconductor device 1300A comprises a first die1303, a second die 1304, a redistribution structure 1311, a first trace1307 for transmitting a first signal, and a second trace 1308 fortransmitting a second signal. The first die 1303 has a first active side1312. The first die 1303 comprises a first I/O connection 1301 and asecond I/O connection 1302 on the first active side. The first I/Oconnection 1301 is closer to a side edge 1309 of the first die 1301 thanthe second I/O connection 1302.

The second die 1304 has a second active side 1313. The second die 1304comprises a third I/O connection 1314 and a fourth I/O connection 1306on the second active side 1313. The third I/O connection 1314 is closerto a side edge 1310 of the second die 1304 than the fourth I/Oconnection 1306. The redistribution structure 1311 has a connectionsurface 1315. The connection surface 1315 is connected to the firstactive side 1312 of the first die 1303 and the second active side 1313of the second die 1304.

The first trace 1307 connects the first I/O connection 1301 to thefourth I/O connection 1306. The first trace 1307 has a first tracelength. The second trace 1308 connects the second I/O connection 1302 tothe third connection 1314. The second trace has a second trace length.The first signal and the second signal are synchronous to a clocksignal. The first signal does not allow a phase delay over one clockperiod with respect to the second signal. In one example, the firsttrace length and the second trace length are substantially the same.

In one embodiment, a semiconductor package 1300A comprises a first die1303, a second die 1304, a redistribution structure 1311, a first trace1307, and a second trace 1308. The first die 1303 has a first activeside 1302. The first die 1303 comprises a first I/O connection 1301 anda second I/O connection 1302 on the first active side 1302. The firstI/O connection 1301 is closer to a side edge 1309 of the first die thanthe second I/O connection 1302. The second die 1304 has a second activeside 1313. The second die comprises a third I/O connection 1314 and afourth I/O connection 1306 on the second active side 1313. The third I/Oconnection 1314 is closer to a side edge 1310 of the second die 1304than the fourth I/O connection 1306. The redistribution structure 1311has a connection surface 1315.

The connection surface 1315 is connected to the first active side 1312of the first die 1303 and the second active side 1313 of the second die1304. The first trace 1307 transmits a first signal. The first trace1307 connects the first I/O connection 1301 to the third I/O connection1314. The first trace 1307 has a first trace length. The second trace1308 for transmits a second signal. The second trace 1308 connects thesecond I/O connection 1302 to the fourth connection 1314. The secondtrace has a second trace length. The first trace length and the secondtrace length are substantially the same.

FIG. 14A shows an embodiment of a semiconductor device. FIG. 14B showsan embodiment of a semiconductor device. FIG. 14C shows an embodiment ofa semiconductor device. FIG. 14D shows an embodiment of a semiconductordevice. FIG. 14E shows an embodiment of a semiconductor device. FIG. 14Fshows a cross sectional view of a redistribution structure and a die.

FIG. 14G shows one step of a method for making a semiconductor device.FIG. 14H shows one step of a method for making a semiconductor device.FIG. 14I shows one step of a method for making a semiconductor device.FIG. 14J shows one step of a method for making a semiconductor device.FIG. 14K shows one step of a method for making a semiconductor device.FIG. 14L shows one step of a method for making a semiconductor device.

FIG. 14M shows one step of a method for making a semiconductor device.FIG. 14N shows one step of a method for making a semiconductor device.FIG. 14O shows one step of a method for making a semiconductor device.FIG. 14P shows one step of a method for making a semiconductor device.FIG. 14Q shows one step of a method for making a semiconductor device.FIG. 14R shows one step of a method for making a semiconductor device.FIG. 14S shows one step of a method for making a semiconductor device.

FIG. 14T shows one step of a method for making a semiconductor device.FIG. 14U shows one step of a method for making a semiconductor device.FIG. 14V shows one step of a method for making a semiconductor device.FIG. 14W shows one step of a method for making a semiconductor device.FIG. 14X shows one step of a method for making a semiconductor device.FIG. 14Y shows one step of a method for making a semiconductor device.

A trace thickness ratio (A/B) is defined as a ratio between a firsttrace thickness A and a second trace thickness B. For example, a tracethickness ratio (A/B) is the result of the first trace thickness Adivided by the second trace thickness B. In other words, the first tracethickness A is a numerator and the second trace thickness B is adenominator. In another example, there is a third trace thickness C. Atrace thickness ratio (C/A) is the result of the third trace thickness Cdivided by the first trace thickness A. In other words, the third tracethickness C is a numerator and the first trace thickness A is adenominator.

In one embodiment, with reference to FIG. 14A to FIG. 14F, asemiconductor device 1400E comprises a die 1401, a redistributionstructure 1407, and a plurality of metal posts 1420. The die 1401 has anactive surface 1410. The die 1401 comprises a plurality of metal pads1411 on the active surface 1410.

The redistribution structure 1407 comprises a first sublayer 1412, asecond sublayer 1413, and a third sublayer 1414. The second sublayer1413 is located between the first sublayer 1412 and the third sublayer1414. The first sublayer 1412 comprises a plurality of first vias 1416and a plurality of first metal traces 1421. The first vias 1416 arecup-shaped. The first metal traces 1421 have a first trace thickness A.The second sublayer 1413 comprises a plurality of second vias 1417 and aplurality of second metal traces 1422. The second vias 1417 arecup-shaped. The second metal traces 1422 have a second trace thicknessB. The third sublayer 1414 comprises a plurality of third vias 1418 anda plurality of third metal traces 1423. The third vias 1418 arecup-shaped. The third metal traces 1423 have a third trace thickness C.

The first vias 1416 are in contact with the metal posts 1420. The metalpads 1411 are in contact with the metal posts 1420. The first tracethickness A is smaller than the third trace thickness C. The first metaltraces 1421, the second metal traces 1422, and the third metal traces1423 are made of aluminium, copper, tungsten, and/or alloys thereof. Thefirst sublayer 1412, the second sublayer 1413, and the third sublayer1414 can comprise WPR, epoxy, polyimide (PI), benzocyclobutene (BCB), orpolybenzoxazole (PBO).

In one example, the first metal traces 1421 are made of copper. In oneexample, the second metal traces 1422 are made of copper. In oneexample, the third metal traces 1423 are made of copper. In one example,the semiconductor device 1400E comprises a plurality of metal pillars1408. The metal pillars 1408 are beside the die 1401. The metal pillars1408 are connected to the the redistribution structure 1407.

In one example, the redistribution structure 1407 is a firstredistribution structure. The semiconductor device 1400E comprises asecond redistribution structure 1409, and a second die 1402. The seconddie 1402 is a memory die. The second die 1402 is connected to the secondredistribution structure 1409. In one example, a height of the metalposts is between 1 micrometer and 10 micrometer. In one example, aheight of the metal posts is between 1 micrometer and 5 micrometer. Inone example, a molding material 1425 is filled between the the firstsublayer 1402 and the active surface 1410 of the die 1401.

In one example, a molding material 1425 is filled between the die 1401and the metal pillars 1408. In one example, the first sublayer 1412comprises polyimide. In one example, the first sublayer 1412 comprisespolybenzoxazole (PBO). In one example, the second sublayer 1413comprises polyimide. In one example, the second sublayer 1413 comprisespolybenzoxazole (PBO).

In one example, the third sublayer 1414 comprises polyimide. In oneexample, the third sublayer 1414 comprises polybenzoxazole (PBO). In oneexample, the semiconductor device 1400A comprises a plurality of solderbumps 1405. The solder bumps 1405 are connected between the firstredistribution structure 1407 and the second redistribution structure1409. In one example, the die 1401 is a first die 1401, thesemiconductor device 1400A comprises a second die 1402 and a third die1403.

In one example, the semiconductor device 1400A comprises a moldingmaterial 1404. The molding material 1404 is filled to surround thesecond die 1402 and the third die 1403. In one example, an adhesivelayer 1450 is in contact with a back side of the second die 1402. In oneexample, an adhesive layer 1451 is in contact with a back side of thethird die 1403.

In one example, the molding material 1404 does not cover the adhesivelayer 1450 and the adhesive layer 1451. In one example, an adhesivelayer 1437 is in contact with a back side of the first die 1401. In oneexample, the molding material 1425 does not cover the adhesive layer1437. In one example, the molding material 1425 is in direct contactwith the second redistribution structure 1409. In one example, themolding material 1425 covers the adhesive layer 1437. In one example,the molding material 1404 covers the second die 1402 and the third die1403.

In one example, the molding material 1425 is in contact with at leastone lateral side 1457 of the adhesive layer 1438. In one example, themolding material 1425 does not cover a top side 1458 of the adhesivelayer 1438.

One objective of the semiconductor device 1400E is to provide a higherreliability. Another objective of the semiconductor device 1400E is toprovide finer interconnection pitches than traditional BGA packages.Still another objective of the semiconductor device 1400E is to providea cost effective package type.

In one embodiment, a semiconductor device 1400E comprises a die 1401, aredistribution structure 1407, and a plurality of metal posts 1420. Thedie 1401 has an active surface 1410. The die 1401 comprises a pluralityof metal pads 1411 on the active surface 1410.

The redistribution structure 1407 comprises a first sublayer 1412, asecond sublayer 1413, a third sublayer 1414, and a fourth sublayer 1415.The second sublayer 1413 is located between the first sublayer 1412 andthe third sublayer 1414. The third sublayer 1414 is located between thesecond sublayer 1413 and the fourth sublayer 1415. The first sublayer1412 comprises a plurality of first vias 1416 and a plurality of firstmetal traces 1421. The first vias 1416 are cup-shaped. The first metaltraces have a first trace thickness 1421. The second sublayer 1413comprising a plurality of second vias 1417 and a plurality of secondmetal traces 1422.

The second vias 1417 are cup-shaped. The second metal traces 1422 have asecond trace thickness B. The third sublayer 1414 comprises a pluralityof third vias 1418 and a plurality of third metal traces 1423. The thirdvias 1418 are cup-shaped. The third metal traces 1423 have a third tracethickness C. The fourth sublayer 1415 comprises a plurality of fourthvias 1419 and a plurality of fourth metal traces 1424. The fourth metalvias 1424 are cup-shaped. The fourth metal traces 1424 have a fourthtrace thickness D. The first vias 1416 are in contact with the metalposts 1420. The metal pads 1411 are in contact with the metal posts1420. The first trace thickness A is smaller than the fourth tracethickness D.

In one example, each of the first vias 1416 have a first width ratio.Each of the second vias 1417 have a second width ratio. Each of thethird vias 1418 have a third width ratio. Each of the fourth vias 1419have a fourth ratio. The definition of a width ratio is defined later inthis specification. In some cases, two different first vias 1416 canhave two different first width ratios. In most cases, the plurality offirst vias 1416 have the same first width ratio. In some cases, twodifferent second vias 1417 can have two different second width ratios.In most cases, the plurality of second vias 1417 have the same secondwidth ratio. In some cases, two different third vias 1418 can have twodifferent third width ratios. In most cases, the plurality of third vias1418 have the same third width ratio. In some cases, two differentfourth vias 1419 can have two different fourth width ratios. In mostcases, the plurality of fourth vias 1419 have the same fourth widthratio.

In one embodiment, a semiconductor device 1400E comprises a die 1401, aredistribution structure 1407, and a plurality of metal posts 1420. Thedie 1401 has an active surface 1410. The die 1401 comprises a pluralityof metal pads 1411 on the active surface 1410.

a redistribution structure 1407, the redistribution structure 1407comprising a first sublayer 1412, a second sublayer 1413, and a thirdsublayer 1414. The second sublayer 1413 is located between the firstsublayer 1412 and the third sublayer 1414. The first sublayer 1412comprises a plurality of first vias 1416 and a plurality of first metaltraces 1421. The first metal traces 1421 have a first trace thickness A.The second sublayer 1413 comprises a plurality of second vias 1417 and aplurality of second metal traces 1422. The second metal traces 1422 havea second trace thickness B. The third sublayer 1414 comprises aplurality of third vias 1418 and a plurality of third metal traces 1423.The third metal traces 1423 have a third trace thickness C.

The first vias 1416 are in contact with the metal posts 1420. The metalpads 1411 are in contact with the metal posts 1420. A trace thicknessratio (C/A) between the third trace thickness C and the first tracethickness A is between 1 and 10. A trace thickness ratio (C/A) betweenthe third trace thickness C and the first trace thickness A is between 1and 5. In one example, a trace thickness ratio (C/A) between the thirdtrace thickness C and the first trace thickness A is between 1 and 3.

In one embodiment, a semiconductor device 1400E comprises a die 1401, aredistribution structure 1407, and a plurality of metal posts 1420. Thedie 1401 has an active surface 1410. The die 1401 comprises a pluralityof metal pads 1411 on the active surface 1410.

The redistribution structure 1407 comprises a first sublayer 1412, asecond sublayer 1413, a third sublayer 1414, and a fourth sublayer 1415.The second sublayer 1413 is located between the first sublayer 1412 andthe third sublayer 1414. The third sublayer 1414 is located between thesecond sublayer 1413 and the fourth sublayer 1415. The first sublayer1412 comprises a plurality of first vias 1416 and a plurality of firstmetal traces 1421. The first metal traces 1421 have a first tracethickness A.

The second sublayer 1413 comprises a plurality of second vias 1417 and aplurality of second metal traces 1422. The second metal traces 1422 havea second trace thickness B. The third sublayer 1414 comprises aplurality of third vias 1418 and a plurality of third metal traces 1423.The third metal traces 1423 have a third trace thickness C. The fourthsublayer 1415 comprises a plurality of fourth vias 1419 and a pluralityof fourth metal traces 1424. The fourth metal traces 1424 have a fourthtrace thickness D.

The first vias 1416 are in contact with the metal posts 1420. The metalpads 1411 are in contact with the metal posts 1420. A trace thicknessratio (D/B) between the fourth trace thickness D and the second tracethickness B is between 1 and 10. In one example, a trace thickness ratio(D/B) between the fourth trace thickness D and the second tracethickness B is between 1 and 5. In one example, a trace thickness ratio(D/B) between the fourth trace thickness D and the second tracethickness B is between 1 and 3.

In one embodiment, with reference to FIG. 14G to FIG. 14R, a method formanufacturing a semiconductor device 1400R is disclosed. First, acarrier 1430 is provided. Then, a second adhesive layer 1437 is placedon the carrier 1430. Then, a second die 1402 is placed on the adhesivelayer 1437. The second die 1402 is encapsulated by a second moldingmaterial 1404. Then, the second molding material 1404 is ground toplanarize a second surface 1438 of the second molding material 1404.Then, a second redistribution structure 1409 is formed on the second die1402 so that the second die 1402 is electrically connected to the secondredistribution structure 1409.

Then, a first adhesive layer 1438 is placed on the second redistributionstructure 1409. Then, a first die 1401 is placed on the first adhesivelayer 1438. Then, a plurality of metal pillars 1408 are formed on thesecond redistribution structure 1409. The first die 1401 is encapsulatedby a first molding material 1425. Then, a first molding material 1425 isground to planarize a first surface 1439 of the first molding material1425. Then, a first redistribution structure 1407 is formed on the firstdie 1401 so that the first die 1401 is electrically connected to thefirst redistribution structure 1407. Then, the carrier 1430 is removed.In one example, a third molding material 1440 is filled to cover thesecond die 1402. In one example, the metal pillars 1408 are formed byplating.

In one example, the first metal traces are formed by metal depositing.The second metal traces are formed by metal depositing. The third metaltraces are formed by metal depositing. The first sublayer 1412, thesecond sublayer 1413, and the third sublayer 1414 can formed by spincoating, spray coating, PVD, CVD, or printing.

In one embodiment, with reference to FIG. 14S to FIG. 14Y, a method formanufacturing a semiconductor device 1400Y is disclosed. First, acarrier 1432 is provided. Then, an adhesive layer 1433 is placed on thecarrier 1432. Then, a die 1431 is placed on the adhesive layer 1433.Then, a plurality of metal pillars 1434 are formed on the carrier 1432.Then, the first die 1431 is encapsulated by a molding material 1435.grinding the molding material 1442 to planarize a first surface 1441 ofthe molding material 1442. Then, a redistribution structure 1435 isformed on the die 1431 so that the die 1431 is electrically connected tothe redistribution structure 1435. Then, the carrier 1432 is removed.Then, a plurality of solder bumps 1436 are placed on the redistributionstructure 1435.

FIG. 15A shows one step of a method for making a semiconductor package.FIG. 15B shows one step of a method for making a semiconductor package.FIG. 15D shows one step of a method for making a semiconductor package.FIG. 15E shows one step of a method for making a semiconductor package.FIG. 15F shows one step of a method for making a semiconductor package.FIG. 15G shows one step of a method for making a semiconductor package.

In one embodiment, a method for making a semiconductor package isdisclosed. First, a supporter 1501 is provided. The supporter 1501 has afirst side 1504 and a second side 1505. The supporter 1501 is placedbetween a first die 1502 and a second die 1503.

FIG. 15H shows one step of a method for making a semiconductor package.FIG. 15I shows one step of a method for making a semiconductor package.FIG. 15J shows one step of a method for making a semiconductor package.FIG. 15K shows one step of a method for making a semiconductor package.FIG. 15L shows one step of a method for making a semiconductor package.FIG. 15M shows one step of a method for making a semiconductor package.FIG. 15N shows one step of a method for making a semiconductor package.FIG. 15O shows one step of a method for making a semiconductor package.FIG. 15P shows one step of a method for making a semiconductor package.

The first die 1502 has a first active surface 1506 and a first backsurface 1507. The second die 1503 has a second active surface 1508 and asecond back surface 1509. The first side 1502 of the supporter 1501 isin contact with the first back surface 1507 of the first die 1502. Thesecond side 1505 of the supporter 1501 is in contact with the secondback surface 1509 of the second die 1503. Then, a carrier 1510 isprovided. Then, the second die 1503 is putted on the carrier 1510. Thesecond active surface 1508 of the second die 1503 is in contact with thecarrier 1510.

In one example, a first adhesive 1511 is applied between the first side1504 of the support 1501 and the first back surface 1507 of the firstdie 1502. In one example, a second adhesive 1512 is applied between thesecond side 1503 of the support 1501 and the second back surface 1509 ofthe second die 1503. In one example, the method further comprises:forming a plurality of first metal posts 1515 on the first activesurface 1506 of the first die 1502 before putting the first die on thecarrier 1510. In one example, a plurality of metal vias 1513 are formedon the carrier 1510.

In one example, a first molding material 1517 is disposed so that thefirst molding material 1517 covers the first active surface 1506 of thefirst die 1502. In one example, the first molding material 1517 isground to planarize the first molding material 1517. In one example, afirst redistribution structure 1519 is formed on a first surface 1518 ofthe molding material 1517. In one example, the carrier 1510 is removedfrom the second die 1503.

In one example, protrusions 1521 are formed on the metal vias 1513. Inone example, a plurality of second metal posts 1516 are formed on thesecond active surface 1508 of the second die 1503. In one example, asecond molding material 1522 is disposed on the first molding material1517. In one example, the second molding material 1522 is ground toplanarize the molding material 1522. In one example, a secondredistribution structure 1520 is formed so that the secondredistribution structure 1520 is connected to the protrusions 1521 onthe metal vias 1513 and the second metal posts 1516 on the second activesurface 1508 of the second die 1503.

In one example, the carrier 1510 comprises an adhesive layer 1524. Theadhesive layer 1524 is in contact with the second active surface 1508 ofthe second die 1503. In one example, the supporter 1501 comprises metal.In one example, the supporter 1501 comprise an organic material.

FIG. 16A shows one step of a method for making a semiconductor package.FIG. 16B shows one step of a method for making a semiconductor package.FIG. 16C shows one step of a method for making a semiconductor package.FIG. 16D shows one step of a method for making a semiconductor package.FIG. 16E shows one step of a method for making a semiconductor package.FIG. 16F shows one step of a method for making a semiconductor package.

FIG. 16G shows one step of a method for making a semiconductor package.FIG. 16H shows one step of a method for making a semiconductor package.FIG. 16I shows one step of a method for making a semiconductor package.FIG. 16J shows one step of a method for making a semiconductor package.FIG. 16K shows one step of a method for making a semiconductor package.FIG. 16L shows one step of a method for making a semiconductor package.FIG. 16M shows one step of a method for making a semiconductor package.

In one embodiment, a method for making a semiconductor package 1600M isdisclosed. First, a carrier 1602 is provided. Then, a first die 1601 isplaced on the carrier 1602. The first die 1601 has a first activesurface 1612 and a first back surface 1613. The first active surface1612 of the first die 1601 is in contact with the carrier 1602. Then, anadhesive 1603 is applied on the first back surface 1613 of the first die1601.

Then, a second die 1604 is placed on the adhesive 1603. The second die1604 has a second active surface 1615 and a second back surface 1614.The second back surface 1614 is in contact with the adhesive 1603. Then,a molding material 1606 is applied to encapsulate the first die 1601 andthe second die 1604. Then, the molding material 1606 is ground toplanarize a surface 1607 of the molding material 1606. Then, aredistribution structure 1608 is formed on the surface 1607 of themolding material 1606.

In one example, a set of holes 1609 are formed through the moldingmaterial 1606. In one example, a conductive material 1617 is filled intothe holes 1609 to form conductive vias 1619. In one example, the surface1607 is a first surface 1607 of the molding material 1606. The carrier1602 is removed so that a second surface 1616 of the molding material1606 is exposed. In one example, the molding material 1606 is a firstmolding material 1606, and a second molding material 1610 is applied onthe first molding material 1606.

In one example, the redistribution structure 1608 is a firstredistribution structure 1608. A second redistribution structure 1611 isformed on the second molding material 1610. In one example, the secondmolding material 1610 is ground to planarize the second molding material1610. In one example, a plurality of first metal posts 1609 are formedon the first active surface 1612 of the first die 1601. In one example,protrusions 1618 are formed on the conductive vias 1619. In one example,a plurality of second metal posts 1605 are formed on the second activesurface 1615 of the second die 1604.

FIG. 17A shows an embodiment of a semiconductor device. FIG. 17B showsan embodiment of a connection structure. FIG. 17C shows an embodiment ofa connection structure. FIG. 17D shows an embodiment of a connectionstructure. FIG. 17E shows an embodiment of a connection structure. FIG.17F shows an embodiment of a semiconductor device. FIG. 17G shows anembodiment of a connection structure.

In one embodiment, A semiconductor device 1700A comprises a first memorydie 1701, a second memory die 1704, an interface die 1703, a firstredistribution structure 1720, a molding material 1702, a processor die1707, and a set of conductive pillars 1708. The first memory die 1701has a first active surface 1721 and a first back surface 1722. The firstmemory die 1701 comprises a first set of data bus connection ends 1727on the first active surface 1721. The second memory die 1704 has asecond active surface 1726 and a second back surface 1725. The secondmemory die 1704 comprises a second set of data bus connection ends 1728on the second active surface 1726.

The interface die 1703 has an interface die active surface 1724 and aninterface die back surface 1723. The interface die 1703 has a set ofinterface die first data connection ends 1729 on the interface dieactive surface 1724. The interface die 1703 has a set of interface diedata second data connection ends 1730 on the interface die activesurface 1724. The first active surface 1721 of the first memory die 1701is in contact with the first redistribution structure 1720. The secondactive surface 1726 of the second memory die 1704 is in contact with thefirst redistribution structure 1720.

The first redistribution structure 1720 comprises a first set of memorydata traces 1709, a second set of memory data traces 1705, and a set ofprocessor data traces 1706. The first set of memory data traces 1709 isconnected between the first set of data bus connection ends 1727 and theset of interface die first data connection ends 1729. The second set oftraces 1705 are connected between the second set of data bus connectionends 1728 and the set of interface die second data connection ends 1730.The molding material 1702 is filled between the first memory die 1701and the interface die 1703 and between the second memory die 1704 andthe interface die 1703.

The processor die 1707 has a processor die active surface 1731 and aprocessor die back surface 1732. The processor die 1707 comprises a setof processor data bus connection ends 1733 on the processor die activesurface 1731. The processor die 1707 is connected to the firstredistribution structure 1720 through the set of conductive pillars1708. The set of processor data bus connection ends 1733 is electricallyconnected to the set of processor data traces 1706.

In one embodiment, a semiconductor device 1700F comprises a first memorydie 1701, a second memory die 1704, an interface die 1703, a firstredistribution structure 1720, a molding material 1702, a processor die1707, and a set of conductive bumps 1734. The first memory die 1701 hasa first active surface 1721 and a first back surface 1722. The firstmemory die 1701 comprises a first set of data bus connection ends 1727on the first active surface 1721.

The second memory die 1704 has a second active surface 1726 and a secondback surface 1725. The second memory die 1704 comprises a second set ofdata bus connection ends 1728 on the second active surface 1706. Theinterface die 1703 has an interface die active surface 1724 and aninterface die back surface 1723. The interface die 1703 has a set ofinterface die first data connection ends 1729 on the interface dieactive surface 1724. The interface die 1703 has a set of interface diedata second data connection ends 1730 on the interface die activesurface 1724. The first active surface 1721 of the first memory die 1701is in contact with the first redistribution structure 1720.

The second active surface 1726 of the second memory die 1704 is incontact with the first redistribution structure 1720. The firstredistribution structure 1720 comprises a first set of memory datatraces 1709, a second set of memory data traces 1705, and a set ofprocessor data traces 1706. The first set of memory data traces 1709 isconnected between the first set of data bus connection ends 1727 and theset of interface die first data connection ends 1729. The second set ofmemory data traces 1705 is connected between the second set of data busconnection ends 1728 and the set of interface die second data connectionends 1730.

A molding material 1702 is filled between the first memory die 1701 andthe interface die 1703 and between the second memory die 1704 and theinterface die 1703. The processor die 1707 has a processor die activesurface 1724 and a processor die back surface 1723. The processor die1707 comprises a set of processor data bus connection ends 1733 on theprocessor die active surface 1724. The processor die 1707 is connectedto the first redistribution structure 1720 through the set of conductivebumps 1734. The set of processor data bus connection ends 1733 iselectrically connected to the set of processor data traces 1706.

In one embodiment, a semiconductor device 1800K comprises a first die1865, a second die 1867, and a redistribution structure 1875. The firstdie 1865 has an L1 side 1871 and an S1 side 1868. The L1 side 1871 islonger than the S1 side 1868. The L1 side 1871 is perpendicular to theS1 side 1868. The first die 1865 comprises L1 connection ends 1872 andS1 connection ends 1873.

The L1 connection ends 1872 are disposed on an active surface 1874 ofthe first die 1865. The L1 connection ends 1872 are substantiallydisposed along the L1 side 1871. The S1 connection ends 1873 aredisposed on the active surface 1874 of the first die 1865. The S1connection ends 1873 are substantially disposed along the S1 side 1868.The second die 1867 has an L2 side 1870 and an S2 side 1869. The L2 side1870 is longer than than the S2 side. The L2 side is perpendicular tothe S2 side 1869. The second die 1867 comprises a first group 1876 of L2connection ends 1879, a second group 1877 of L2 connection ends 1879,and S2 connection ends 1878.

The L2 connection ends 1879 are substantially disposed along the L2 side1870. The redistribution structure 1875 has a first group of traces 1845and a second group of traces 1846. The first group of traces 1845 isconnected between the S1 connection ends 1873 and the first group of1841 L2 connection ends 1879. The second group of traces 1846 isconnected between the L1 connection ends 1872 and the second group 1877of L2 connection ends 1879. The S1 side 1868 is parallel to the S2 side1869.

In one embodiment, a semiconductor device 1800L comprises a first die1850, a second die 1848, and a redistribution structure 1859. The firstdie 1850 has an L1 side 1856 and an S1 side 1854. The L1 side 1856 isperpendicular to the S1 side 1854.

The first die 1850 has a first active surface 1857. The first die 1850comprises an L1 connection area 1852 on the first active surface 1857.The L1 connection area 1852 is substantially along the L1 side 1856. Thefirst die 1850 comprises an S1 connection area 1853 on the first activesurface 1857. The S1 connection area 1853 is substantially along the S1side 1854. The second die 1848 has an L2 side 1855 and an S2 side 1861.The second die 1848 has a second active surface 1858. The second die1848 comprises an L2 connection area 1851 on the second active surface1858. The L2 connection area 1851 is substantially along the L2 side.

The L1 side is parallel to the L2 side. The redistribution structure1859 has a first group of traces 1847 and a second group of traces 1849.The first group of traces 1847 is connected between the S1 connectionarea 1853 and the L2 connection area 1851. The second group of traces1849 is connected between the L1 connection area 1852 and the L2connection area 1851. An average length of the second group of traces isshorter than that of the first group of traces.

FIG. 18A shows a back surface view of two dies placed on aredistribution structure. FIG. 18B shows a cross sectional view of twodies placed on a redistribution structure. FIG. 18C shows an embodimentof a connection structure. FIG. 18D shows an embodiment of a connectionstructure. FIG. 18E shows a back surface view of two dies placed on aredistribution structure. FIG. 18F shows a back surface view of two diesplaced on a redistribution structure. FIG. 18G shows a back surface viewof two dies placed on a redistribution structure.

FIG. 18H shows a cross sectional view of two dies placed on aredistribution structure. FIG. 18I shows an embodiment of a connectionstructure. FIG. 18J shows an embodiment of a connection structure. FIG.18K shows a back surface view of two dies placed on a redistributionstructure. FIG. 18L shows a back surface view of two dies placed on aredistribution structure. FIG. 18M shows a cross sectional view of twodies placed on a redistribution structure. FIG. 18N shows a back surfaceview of two dies placed on a redistribution structure. FIG. 18O shows aback surface view of two dies placed on a redistribution structure. FIG.18P shows a cross sectional view of two dies placed on a redistributionstructure.

With reference to FIG. 18A, in one embodiment, a semiconductor device1800A comprises a first die 1813, a second die 1814, a redistributionstructure 1817, a first connection structure 1818, and a secondconnection structure 1819.

The first die 1813 has a first active surface 1815. The first die has anA1 side 1801, an A2 side 1812, an A3 side 1810, and an A4 side 1811. TheA1 side 1801 is parallel to the A3 side 1810. The A2 side 1812 isparallel to the A4 side 1811. The A2 side 1812 is longer than the A1side 1801. The A1 side 1801 is along an A1 axis 1804. The A3 side 1810is along an A3 axis 1808. The second die 1814 has a second activesurface 1816. The second die 1814 has a B1 side 1802, a B2 side 1805, aB3 side 1809, and a B4 side 1806. The B1 side 1802 is parallel to the B3side 1809. The B2 side 1805 is parallel to the B4 side 1806. The B2 side1805 is longer than the B1 side 1802.

The B1 side 1802 is along a B1 axis 1803. The B3 side 1809 is along a B3axis 1807. The first active surface 1815 is connected to theredistribution structure 1817 through the first connection structure1818. The second active surface 1816 is connected to the redistributionstructure 1817 through the second connection structure 1819. The A1 axis1804 intersects the second die 1814. The A3 axis 1808 does not intersectthe second die 1814, the B1 axis 1803 does not intersect the first die1813, and the B3 axis 1807 intersects the first die 1813.

In one example, the semiconductor device further comprises a moldingmaterial 1820. The molding material 1720 is filled between the first die1813 and the second die 1814. In one example, the first die 1813 is alogic die and the second die 1814 is a memory die. In one example, thefirst die 1813 is a memory die and the second die 1814 is a logic die.In one example, the semiconductor device 1800A further comprises a firstgroup of traces 1821 and a second group of traces 1822. Each trace ofthe first group of traces is connected between the A1 side 1801 and theB4 side 1806 and each trace of the second group of traces is connectedbetween the A2 side 1812 and the B4 side 1806.

In one example, a subgroup 1824 of the second group of traces 1822 areassigned as a data bus for transmitting data from the memory die 1814.In one example, at least two traces 1823 of the second group of traces1822 are assigned as a pair of complementary data strobe signals.

With reference to FIG. 18B and FIG. 18G, in one embodiment, asemiconductor device 1800G comprises a first die 1826, a second die1831, a redistribution structure 1842, a first connection structure1843, and a second connection structure 1844. The first die 1826 has afirst active surface 1839. The first die 1826 has an A1 side 1827, an A2side 1841, an A3 side 1835, and an A4 side 182. The A1 side 1827 isparallel to the A3 side 1835. The A2 side 1841 is parallel to the A4side 1825. The A2 side 1841 is longer than the A1 side 1827. The A1 side1827 is along an A1 axis 1830. The A3 side 1835 is along an A3 axis1837.

The second die 1831 has a second active surface 1840. The second die hasa B1 side 1828, a B2 side 1832, a B3 side 1834, and a B4 side 1833. TheB1 side 1828 is parallel to the B3 side 1834. The B2 side 1832 isparallel to the B4 side 1833. The B2 side 1832 is longer than the B1side 1828. The B1 side 1828 is along a B1 axis 1829. The B3 side 1834being along a B3 axis 1836. The first active surface 1839 is connectedto the redistribution structure 1842 through the first connectionstructure 1843. The second active surface 1840 is connected to theredistribution structure 1842 through the second connection structure1844.

The A1 axis 1830 intersects the second die 1831. The A3 axis 1837intersects the second die 1831. The B1 axis 1829 does not intersect thefirst die 1826. The B3 axis 1836 does not intersect the first die 1826.

FIG. 19A shows a cross sectional view of two dies placed on aredistribution structure. FIG. 19B shows an embodiment of a connectionstructure. FIG. 19C shows an embodiment of a connection structure. FIG.19D shows an embodiment of a connection structure. FIG. 19E shows anembodiment of a connection structure. FIG. 19F shows a cross sectionalview of a semiconductor device. FIG. 19G shows a cross sectional view ofa semiconductor device. FIG. 19H shows a cross sectional view of twodies placed on a redistribution structure. FIG. 19I shows an embodimentof a processor comprising a memory controller.

FIG. 19J shows an embodiment of a connection structure. FIG. 19K showsan embodiment of a connection structure. FIG. 19L shows an embodiment ofa connection structure. FIG. 19M shows an embodiment of a connectionstructure.

In one embodiment, a semiconductor device 1900A comprises a DRAM die1901, a flash memory die 1902, and a redistribution structure 1907. TheDRAM die 1901 has a first active surface 1903 and a first back surface1904. The DRAM die 1901 comprises a group of first connection ends 1921located on the first active surface 1903. The flash memory die 1902 hasa second active surface 1905 and a second back surface 1906. The flashmemory die 1902 comprises a group of second connection ends 1922 locatedon the second active surface 1905.

The redistribution structure 1907 comprises a front side 1908 and a backside 1909. The redistribution structure 1907 comprises a group of thirdconnection ends 1923 on the back side 1909. The DRAM die 1901 isconnected to the front side 1908 of the redistribution structure 1907.The flash memory die 1902 is connected to the front side 1908 of theredistribution structure.

The redistribution structure 1907 comprises a group of first traces anda group of second traces. The group of first traces 1920 is connectedbetween a first subgroup 1924 of the first connection ends 1921 and asubgroup 1926 of the third connection ends 1923. The group of secondtraces 1924 are connected between a second subgroup 1925 of the firstconnection ends 1921 and a subgroup of the second connection ends 1922.A number of the first connection ends 1921 is greater than a number ofthe second connection ends 1922.

In one embodiment, a semiconductor device 1900A comprises a DRAM die1901, a flash memory die 1902, and a redistribution structure 1907. TheDRAM die 1901 has a first active surface 1903 and a first back surface1904. The DRAM die 1901 comprises a group of first connection ends 1921located on the first active surface 1903. The flash memory die 1902 hasa second active surface 1905 and a second back surface 1906. The flashmemory die 1902 comprises a group of second connection ends 1922 locatedon the second active surface 1905.

a redistribution structure 1907, the redistribution structure 1907comprises a front side 1908 and a back side 1909. The redistributionstructure 1907 comprises a group of third connection ends 1923 on theback side 1909. The DRAM die 1901 is connected to the front side 1908 ofthe redistribution structure 1907.

The flash memory die 1902 is connected to the front side 1908 of theredistribution structure 1907. The redistribution structure 1907comprises a group of first traces 1920 and a group of second traces1924. The group of first traces 1920 is connected between a firstsubgroup 1924 of the first connection ends 1921 and a subgroup 1926 ofthe third connection ends 1923. The group of second traces 1924 isconnected between a second subgroup 1925 of the first connection ends1921 and a subgroup 1927 of the second connection ends 1922.

No solder material is placed between the DRAM die 1901 and theredistribution structure 1907. No solder material is placed between theflash memory die 1902 and the redistribution structure 1907.

In one embodiment, a semiconductor device 1800A comprises a DRAM die1901, a flash memory die 1902, and a redistribution structure 1907. TheDRAM die 1901 has a first active surface 1903 and a first back surface1904. The DRAM die 1901 comprises a group of first connection ends 1921located on the first active surface 1903. The flash memory die 1902 hasa second active surface 1905 and a second back surface 1906. The flashmemory die 1902 comprises a group of second connection ends 1922 locatedon the second active surface 1905.

The redistribution structure 1907 comprises a front side 1908 and a backside 1909. The redistribution structure 1907 comprises a group of thirdconnection ends 1923 on the back side 1909. The DRAM die 1901 isconnected to the front side 1908 of the redistribution structure 1907.The flash memory die 1902 is connected to the front side 1908 of theredistribution structure 1907.

The redistribution structure 1907 comprises a group of first traces 1920and a group of second traces 1924. The group of first traces 1920 isconnected between a first subgroup 1924 of the first connection ends1921 and a subgroup 1926 of the third connection ends 1923. The group ofsecond traces 1924 is connected between a second subgroup 1925 of thefirst connection ends 1921 and a subgroup 1927 of the second connectionends 1922.

A first number of the first traces 1920 are assigned as a DRAM data busand a second number of the second traces 1924 are assigned as a flashdata bus, A bus width of the DRAM data bus is wider than the flash databus.

In an embodiment, a semiconductor device 1900A comprises a DRAM die1901, a flash memory die 1902, a redistribution structure 1907, aconnection structure 1928, and a processor 1930. The DRAM die 1901 has afirst active surface 1903 and a first back surface 1904. The DRAM die1901 comprises a group of first connection ends 1921 located on thefirst active surface 1903. The flash memory die 1902 has a second activesurface 1905 and a second back surface 1906. The flash memory die 1902comprises a group of second connection ends 1922 located on the secondactive surface 1905.

The redistribution structure 1907 comprises a front side 1908 and a backside 1909. The redistribution structure 1907 comprises a group of thirdconnection ends 1923 on the back side 1909. The DRAM die 1901 isconnected to the front side 1908 of the redistribution structure 1907.The flash memory die 1902 is connected to the front side 1908 of theredistribution structure 1907. The redistribution structure 1907comprises a group of first traces 1920 and a group of second traces1924.

The group of first traces 1920 is connected between a first subgroup1924 of the first connection ends 1921 and a subgroup 1926 of the thirdconnection ends 1923. The group of second traces 1924 is connectedbetween a second subgroup 1925 of the first connection ends 1921 and asubgroup 1927 of the second connection ends 1922. The connectionstructure 1928 comprises a plurality of solder bumps 1929. The processor1930 comprises a memory controller 1931 for controlling accesses to theDRAM die 1901 and the flash memory die 1902. The processor 1930 isconnected to the back side 1909 of the redistribution structure 1907through the connection structure 1928.

a semiconductor device 1900F comprises a DRAM die 1901, a flash memorydie 1902, a redistribution structure 1907, a connection structure 1928,and a processor 1930. The DRAM die 1901 has a first active surface 1903and a first back surface 1904. The DRAM die 1901 comprises a group offirst connection ends 1921 located on the first active surface 1903. Theflash memory die 1902 has a second active surface 1905 and a second backsurface 1906. The flash memory die 1902 comprises a group of secondconnection ends 1922 located on the second active surface 1905.

The redistribution structure 1907 comprises a front side 1908 and a backside 1909. The redistribution structure 1907 comprises a group of thirdconnection ends 1923 on the back side 1909. The DRAM die 1901 isconnected to the front side 1908 of the redistribution structure 1907.The flash memory die 1902 is connected to the front side 1908 of theredistribution structure 1907.

The redistribution structure 1907 comprises a group of first traces anda group of second traces. The group of first traces 1920 is connectedbetween a first subgroup 1924 of the first connection ends 1921 and asubgroup of the third connection ends 1923. The group of second traces1924 is connected between a second subgroup 1925 of the first connectionends 1921 and a subgroup 1927 of the second connection ends 1922.

The connection structure 1928 comprises a plurality of conductivepillars 1932. The processor 1930 comprises a memory controller 1931 forcontrolling accesses to the DRAM die 1901 and the flash memory die 1902.The processor 1930 is connected to the back side 1909 of theredistribution structure 1907 through the connection structure 1928.

FIG. 20A shows one step of a method for manufacturing a memory module.FIG. 20B shows one step of a method for manufacturing a memory module.FIG. 20C shows one step of a method for manufacturing a memory module.FIG. 20D shows one step of a method for manufacturing a memory module.FIG. 20E shows one step of a method for manufacturing a memory module.FIG. 20F shows one step of a method for manufacturing a memory module.

FIG. 20G shows one step of a method for manufacturing a memory module.FIG. 20H shows one step of a method for manufacturing a memory module.FIG. 20I shows one step of a method for manufacturing a memory module.FIG. 20J shows one step of a method for manufacturing a memory module.FIG. 20K shows one step of a method for manufacturing a memory module.FIG. 20L shows one step of a method for manufacturing a memory module.FIG. 20M shows one step of a method for manufacturing a memory module.

FIG. 20N shows an embodiment of a semiconductor device. FIG. 20O showsan embodiment of a semiconductor device. FIG. 20P shows an embodiment ofa semiconductor device. FIG. 20Q shows an embodiment of a semiconductordevice. FIG. 20R shows an embodiment of a semiconductor device. FIG. 20Sshows one step of a method for manufacturing a memory module. FIG. 20Tshows one step of a method for manufacturing a memory module. FIG. 20Ushows one step of a method for manufacturing a memory module.

In one embodiment, a method for manufacturing a memory module 2000C isdisclosed. First, a first carrier 2023 is provided. Then, a secondcarrier 2024 is provided. Then, a plurality of first memory dies 20252026 are placed on the first carrier 2023. Then, a plurality of secondmemory dies 2027 2028 are placed on the second carrier 2024. Then, aplurality of first vias 2028 are formed on the first carrier 2023. Then,a plurality of second vias 2029 are formed on the second carrier 2024.

Then, a first supporting material 2030 is placed on the first carrier2023. The first supporting material 2023 is disposed among the firstmemory dies 2025 and 2026. Then, a second supporting material 2031 isplaced on the second carrier 2024. The second supporting material 2031is disposed among the second memory dies 2027 and 2028. Then, a firstredistribution structure 2032 is formed on the first memory dies 2025and 2026. The first redistribution structure 2032 is electricallyconnected to the first memory dies 2025 and 2026. The firstredistribution structure 2032 is electrically connected to the firstvias 2028.

Then, a second redistribution structure 2033 is formed on the secondmemory dies 2027 and 2028. The second redistribution structure 2033 iselectrically connected to the second memory dies 2027 and 2028 and thesecond redistribution structure 2033 is electrically connected to thesecond vias 2029. Then, the first carrier 2023 is removed to exposefirst connection ends 2040 of the first vias 2028. Then, the secondcarrier 2024 is removed to expose the second connection ends 2041 of thesecond vias 2029. Then, the first connection ends 2040 are connected tothe second connection ends 2041.

In one example, the first supporting material 2030 is a moldingmaterial. In one example, the second supporting material 2031 is amolding material. In one example, protrusions 2035 are formed on thefirst connection ends 2040 of the first vias 2028. In one example,protrusions 2036 are formed on the second connection ends 2041 of thesecond vias 2029. In one example, the protrusions 2035 are metal havingsurfaces that are substantially (1, 1, 1) oriented. In one example, theprotrusions 2036 are metal having surfaces that are substantially (1,1, 1) oriented.

In one example, a non conductive film 2042 is disposed on the secondsupporting material 2031. In one example, a pressure is applied on thefirst connection ends 2040 and the second connection ends 2041. In oneexample, the pressure for connecting the the first connection ends 2040and the second connection ends 2041 is between 0.01 torr and 0.001 torr.In one example, the temperature of connecting the first connection ends2040 and the second connection ends 2041 is between 150 and 250 degreeCelsius.

In one embodiment, a method for manufacturing a memory module isdisclosed. First, a first carrier 2023 is provided. Then, a secondcarrier 2024 is provided. Then, a plurality of first memory dies 2025and 2026 are placed on the first carrier 2023. Then, a plurality ofsecond memory dies 2027 and 2028 are placed on the second carrier 2024.Then, a plurality of first vias 2028 are formed on the first carrier2023. Then, a first supporting material 2030 is placed on the firstcarrier 2023. The first supporting material 2023 is disposed among thefirst memory dies 2025 and 2026.

Then, a second supporting material 2031 is placed on the second carrier2024. The second supporting material 2031 is disposed among the secondmemory dies 2027 and 2028. Then, a first redistribution structure 2032is formed on the first memory dies 2025 and 2026. The firstredistribution structure 2032 is electrically connected to the firstmemory dies 2025 and 2026 and the first redistribution structure 2032 iselectrically connected to the first vias 2028. Then, a secondredistribution structure 2033 is formed on the second memory dies 2027and 2028. The second redistribution structure 2033 is electricallyconnected to the second memory dies 2027 and 2028 and the secondredistribution structure 2033 is electrically connected to the secondvias 2029.

Then, the first carrier 2023 is removed to expose first connection ends2040 of the first vias 2028. Then, the second carrier 2024 is removed.Then, the first connection ends 2040 are electrically connected to thesecond redistribution structure 2033. In one example, a plurality ofsecond vias 2029 are formed on the second carrier 2024.

In one embodiment, a semiconductor device 2000A comprises a first memorydie 2003, a second memory die 2005, a first redistribution structure2001, a plurality of first connection elements 2007, a plurality offirst connection elements 2007, a third memory die 2004, a fourth memorydie 2006, a second redistribution structure 2010, and a plurality ofsecond connection elements 2018. The first memory die 2003 iselectrically connected to the first redistribution structure 2001. Thesecond memory die 2005 is electrically connected to the firstredistribution structure 2001. The first connection elements 2007 isconnected to the first redistribution structure 2001.

The third memory die 2004 is electrically connected to the secondredistribution structure 2010. The fourth memory die 2006 iselectrically connected to the second redistribution structure 2010. Theplurality of second connection elements 2018 are electrically connectedto the second redistribution structure 2010. A subset of the connectionelements 2018 are placed beneath the third memory die 2004.

In one example, the semiconductor device 2000A further comprises aprocessor 2022 and a third redistribution structure 2014. The processor2022 is electrically connected to the third redistribution structure2014. The third redistribution structure 2014 is electrically connectedto the second redistribution structure 2010 through the plurality ofsecond connection elements 2018. In one example, the semiconductordevice 2000A further comprises a plurality of conductive vias 2008. Theplurality of conductive vias 2008 are electrically connected to thefirst connection elements 2007 and the second redistribution structure2010.

In one example, the semiconductor device 2000A comprises a plurality ofthird connection elements 2016 and a plurality of conductive vias 2015.The plurality of conductive vias 2015 are electrically connected to thethe third redistribution structure 2014 and the plurality of thirdconnection elements 2016. In one example, the semiconductor device 2000Acomprises a first molding material 2002. The first molding material 2002is filled between the first memory die 2003 and the second memory die2005.

In one example, the semiconductor device 2000A further comprises asecond molding material 2009. The second molding material 2009 is filledbetween the third memory die 2004 and the fourth memory die 2006. In oneexample, the memory die 2003 is a DRAM die and the memory die 2005 is aflash memory die. In one example, the memory die 2004 is a DRAM die andthe memory die 2006 is a flash memory die.

In one embodiment, a semiconductor device 2000A comprises a first memorydie 2003, a second memory die 2005, a first redistribution structure2001, a plurality of first connection elements 2007, a third memory die2004, a fourth memory die 2006, a second redistribution structure 2010,and a plurality of second connection elements 2018. The first memory die2003 is electrically connected the first redistribution structure 2001.The second memory die 2005 is electrically connected to the firstredistribution structure 2001. The first connection elements 2007 isconnected to the first redistribution structure 2001.

The third memory die 2004 is electrically connected to the secondredistribution structure 2010. The fourth memory die 2006 iselectrically connected to the second redistribution structure 2010. Theplurality of second connection elements 2018 are electrically connectedto the second redistribution structure 2010. A majority of electricalconnections between the first memory die 2003 and the firstredistribution structure 2001 are not through solder bumps.

In one embodiment, a semiconductor device 2000A comprises a first memorydie 2003, a second memory die 2005, a first redistribution structure2001, a plurality of first connection elements 2007, a third memory die2004, a fourth memory die 2006, a second redistribution structure 2010,and a plurality of second connection elements 2018. The first memory die2003 is electrically connected the first redistribution structure 2001.The second memory die 2005 is electrically connected to the firstredistribution structure 2001. The first connection elements 2007 areconnected to the first redistribution structure 2001.

The third memory die 2004 is electrically connected to the secondredistribution structure 2010. The fourth memory die 2006 iselectrically connected to the second redistribution structure 2010. Theplurality of second connection elements 2018 are electrically connectedto the second redistribution structure 2010. A majority of electricalconnections between the third memory die 2004 and the secondredistribution structure 2010 are not through solder bumps.

In one embodiment, a semiconductor device 2000E comprises a first memorydie 2003, a second memory die 2005, a first redistribution structure2001, a plurality of first connection elements 2007, a third memory die2004, a fourth memory die 2006, a second redistribution structure 2010,and a plurality of second connection elements 2011. The first memory die2003 is electrically connected to the first redistribution structure2001. The second memory die 2005 is electrically connected to the firstredistribution structure 2001. The first connection elements 2007 areconnected to the first redistribution structure 2001.

The third memory die 2004 is electrically connected to the secondredistribution structure 2010. The fourth memory die 2006 iselectrically connected to the second redistribution structure 2010. Theplurality of second connection elements 2011 are electrically connectedto the second redistribution structure 2010. No connection elements 2011are placed beneath the third memory die 2004.

In one example, the semiconductor device 2000E comprises a processor2022 and a third redistribution structure 2039. The processor 2022 iselectrically connected to the third redistribution structure 2038. Thethird redistribution structure 2039 is electrically connected to thesecond redistribution structure 2010 through the plurality of secondconnection elements 2038.

FIG. 21A shows an embodiment of a semiconductor device. FIG. 21B showsan embodiment of a semiconductor device. FIG. 21C shows an embodiment ofa semiconductor device. FIG. 21D shows an example of two adjacentconductive traces. FIG. 21E shows an example of two adjacent conductivetraces.

In one embodiment, a semiconductor device 2100A comprises a memory die2103, a first redistribution structure 2101, a processor die 2104, asecond redistribution structure 2108, and a plurality of first metalvias 2109.

The memory die 2103 has a first active side 2110 and a first back side2111. The first redistribution structure 2101 is electrically connectedto the first active side 2110 of the memory die 2103. The firstredistribution structure 2101 comprises a plurality of first metaltraces. A smallest pitch 2118 between any two adjacent first metaltraces 2116 2117 is less than 10 micrometer.

The processor die 2104 has a second active side 2112 and a second backside 2113. The redistribution structure 2108 is electrically connectedto the second active side 2112 of the processor die 2104. The secondredistribution structure 2108 comprises a plurality of second metaltraces. A smallest pitch 2121 between any two adjacent second metaltraces 2119 2120 is less than 10 micrometer. The plurality of firstmetal vias 2109 are electrically connected to the first redistributionstructure 2101. The plurality of first metal vias 2109 are electricallyconnected to the second redistribution structure 2108.

In one embodiment, the semiconductor device 2100A comprises a memory die2103, a first redistribution structure 2101, a processor die 2104, asecond redistribution structure 2108, and a plurality of first metalvias 2109. The memory die 2103 has a first active side 2110 and a firstback side 2111. The first redistribution structure 2101 is electricallyconnected to the first active side 2110 of the memory die 2103. Thefirst redistribution structure 2101 comprises a plurality of first metaltraces. No soldering material is placed between the first redistributionstructure 2101 and the first active side 2110 of the memory die 2103.

The processor die 2104 has a second active side 2112 and a second backside 2113. The redistribution structure 2108 is electrically connectedto the second active side 2112 of the processor die 2104. The secondredistribution structure 2108 comprises a plurality of second metaltraces 2115. No soldering material is placed between the secondredistribution structure 2108 and the second active side 2112 of theprocessor die 2104. The plurality of first metal vias 2109 areelectrically connected to the first redistribution structure 2101. Theplurality of first metal vias 2109 are electrically connected to thesecond redistribution structure 2108.

In one embodiment, the semiconductor device 2100A comprises a memory die2103, a first redistribution structure 2101, a first molding material2102, a processor die 2104, a second redistribution structure 2108, asecond molding material 2122, a plurality of first metal vias 2109. Thememory die 2103 has a first active side 2110 and a first back side 2111.The first redistribution structure 2101 is electrically connected to thefirst active side 2110 of the memory die 2103. The first redistributionstructure 2101 comprises a plurality of first metal traces.

The first molding material 2102 is placed on the first distributionstructure 2101. The first molding material 2102 laterally surrounds thememory die 2103. The processor die 2104 has a second active side 2112and a second back side 2113. The redistribution structure 2108 iselectrically connected to the second active side 2112 of the processordie 2104. The second redistribution structure 2108 comprises a pluralityof second metal traces. The second molding material 2122 is placed onthe second distribution structure 2108. The second molding material 2122laterally surrounds the processor die 2104.

The plurality of first metal vias 2109 are electrically connected to thefirst redistribution structure 2101. The plurality of first metal vias2109 are electrically connected to the second redistribution structure2108.

FIG. 22A shows an example of direct metal bonding. FIG. 22B shows anexample of direct metal bonding. FIG. 22C shows an example of directmetal bonding. FIG. 22D shows an example of direct metal bonding. FIG.22E shows an example of direct metal bonding. FIG. 22F shows an exampleof direct metal bonding.

In one embodiment, a semiconductor device 2200B comprises a first die2201, a first copper pillar 2203, a second die 2207, and a second copperpillar 2204. The first die 2201 has a first active side 2214. The firstdie 2201 comprises a first conduction pad 2212 on the first active side2214. The first copper pillar 2203 is located on the first conductivepad 2212. The first copper pillar 2203 has a first surface 2210. Thesecond die 2207 has a second active side 2215. The second die 2207comprises a second conduction pad 2205 on the second active side 2215.

The second copper pillar 2204 is located on the second conductive pad2205. The second copper pillar 2204 has a second surface 2209. The firstcopper pillar 2203 and the second copper pillar 2204 are connected via abonding interface 2213. The bonding interface 2213 is a junction of thefirst surface 2210 and the second surface 2209.

In one example, no solder material is placed on the bonding surface2113. In one example, the first surface 2210 is substantially (1, 1, 1)oriented. In one example, the second surface 2209 is substantially (1,1, 1) oriented. In one example, the first copper pillar 2203 comprises adeposited plating seed layer 2211. In one example, the first copperpillar 2204 comprises a deposited plating seed layer 2208.

In one example, the first copper pillar 2204 further comprises adeposited plating seed layer 2208. In one example, the first die 2201 isa memory die. In one example, the second die 2207 is a processor die. Inone example, the first conductive pad 2212 is an aluminium pad.

In one example, the the second copper pillar 2204 is an aluminium pad.In one example, the first conductive pad 2212 is a copper pad. In oneexample, the the second copper pillar 2204 is a copper pad.

In one embodiment, a semiconductor device 2200D comprises aredistribution structure 2239, a first copper pillar 2232, a die 2237,and a second copper pillar 2234. The redistribution structure 2239comprises a plurality of metal traces 2231. The redistribution structure2239 comprises a first polymer layer 2219 and a second polymer layer2230. The redistribution structure 2239 comprises a metal base structure2218. The first copper pillar 2232 is located on the metal basestructure 2218. The first copper pillar 2232 having a first surface2233.

The die 2237 has an active side 2238. The die 2237 comprises aconductive pad 2235. The second copper pillar 2234 is located on theconductive pad 2235. The second copper pillar 2204 has a second surface2217. The first copper pillar 2232 and the second copper pillar 2234 areconnected via a bonding interface 2237. The bonding interface 2237 is ajunction of the first surface 2233 and the second surface 2217.

In one example, the first polymer layer 2219 is a polyimide layer. Inone example, the second polymer layer 2230 is a polyimide layer. In oneexample, the metal base structure 2218 is a copper base structure. Inone example, the conductive pad 2235 is an aluminium pad.

In one example, no solder material is placed on the bonding surface2237. In one example, the first surface 2233 is substantially (1, 1, 1)oriented. In one example, the second surface 2217 is substantially (1,1, 1) oriented.

FIG. 23A shows an embodiment of a semiconductor device. FIG. 23B showsan example of a via. FIG. 23C shows an example of a via. FIG. 23D showsan example of a via. FIG. 23E shows an example of a via. FIG. 23F showsan example of a via. FIG. 23G shows a comparison among a plurality ofvias. FIG. 23H shows an embodiment of a semiconductor device. FIG. 23Ishows an embodiment of a semiconductor device. FIG. 23J shows anembodiment of a semiconductor device. FIG. 23K shows an embodiment of asemiconductor device. FIG. 23L shows an embodiment of a semiconductordevice. FIG. 23M shows an embodiment of a semiconductor device. FIG. 23Nshows an embodiment of a semiconductor device. FIG. 23O shows anembodiment of a semiconductor device.

In one embodiment, a semiconductor device 2300A comprises a die 2302, aredistribution structure 2301, and a plurality of metal posts 2318. Thedie 2302 has an active surface 2315. The die 2302 comprises a pluralityof metal pads 2316 on the active surface 2315. The redistributionstructure 2301 comprises a first sub layer 2303 and a second sublayer2304. The first sublayer 2303 comprises a plurality of first vias 2308.The first vias 2308 are cup-shaped. The second sublayer 2304 comprises aplurality of second vias 2309. The second vias are cup-shaped.

The first vias 2308 is in contact with the metal posts 2318. The metalpads 2316 are in contact with the metal posts 2318. A first average areaof the first vias 2308 are smaller than a second average area of thesecond vias 2309.

The first via 2308 has a first rim 2320. An area of the first via 2308is the area encircled by the first rim 2320. The second via 2309 has asecond rim 2321. An area of the second via 2309 is the area encircled bythe second rim 2321. The third via 2310 has a third rim 2322. An area ofthe third via 2310 is the area encircled by the third rim 2322. Thefourth via 2311 has a fourth rim 2325. An area of the fourth via 2311 isthe area encircled by the fourth rim 2325.

In one example, a height of the metal posts 2328 is between 1 micrometerand 10 micrometer. In one example, a molding material 2317 is filledbetween the the first sublayer 2303 and the active surface 2315 of thedie 2302. In one example, the first sublayer 2303 comprises polyimide.In one example, the first sublayer 2303 comprises polybenzoxazole (PBO).

In one example, the second sublayer 2304 comprises polyimide. In oneexample, the second sublayer 2304 comprises polybenzoxazole (PBO). Inone example, the redistribution structure 2301 further comprises a thirdsublayer 2305 and the third sublayer 2305 comprises third vias 2310. Inone example, the redistribution structure 2301 comprises a fourthsublayer 2306 and the fourth sublayer 2306 comprises fourth vias 2311.

In one example, the redistribution structure 2301 further comprises afifth sublayer 2307 and the fifth sublayer 2307 comprises fifth vias2319. In one example, the second average area of the second vias 2309 issmaller than a third average area of the third vias 2310. In oneexample, the third average area of the third vias 2310 is smaller than afourth average area of the fourth vias 2311. In one example, the fourthaverage area of the fourth vias 2311 is smaller than a fifth averagearea of the fifth vias 2319.

In one example, the third sublayer 2305 comprises polyimide. In oneexample, the third sublayer 2305 comprises polybenzoxazole (PBO).

In one embodiment, a semiconductor device 2300H comprises a first die2312, a second die 2313, a redistribution structure 2337, and aplurality of metal posts 2339. The first die 2312 comprises a processorunit 2338. The second die 2313 is a memory die. The redistributionstructure 2337 comprises a first sublayer 2333 and a second sub layer2334. The first sublayer 2333 comprises a plurality of first vias 2329.The first vias 2329 are cup-shaped. The second sublayer 2334 comprises aplurality of second vias 2330. The second vias 2330 are cup-shaped.

A first subset of the metal posts 2339 is physically connected to thefirst die 2312. A second subset of the metal posts 2339 is physicallyconnected to the second die 2313. The metal posts 2339 are physicallyconnected to the redistribution structure 2337. A first average area ofthe first vias 2329 is smaller than a second average area of the secondvias 2330. The first die 2312 is electrically connected to the seconddie 2313 through the redistribution structure 2337.

In one example, a height of the metal posts 2339 is between 1 micrometerand 10 micrometer. In one example, a molding material 2335 is filledbetween the the first sublayer 2333 and an active surface of the firstdie 2312. In one example, a molding material 2335 is filled between thethe first sublayer 2333 and an active surface of the second die 2313. Inone example, the first sublayer 2333 comprises polyimide.

In one example, the first sublayer 2333 comprises polybenzoxazole (PBO).In one example, the second sublayer 2334 comprises polyimide. In oneexample, the second sublayer 2334 comprises polybenzoxazole (PBO). Inone example, the redistribution structure 2337 comprises a thirdsublayer 2350 and the third sublayer 2350 comprises third vias 2352.

In one example, the redistribution structure 2337 comprises a fourthsublayer 2351 and the fourth sublayer 2351 comprises fourth vias 2353.In one example, the second average area of the second vias 2330 issmaller than a third average area of the third vias 2352. In oneexample, the third average area of the third vias 2352 is smaller than afourth average area of the fourth vias 2353. In one example, the thirdsublayer 2350 comprises polyimide. In one example, the third sublayer2350 comprises polybenzoxazole (PBO).

In one embodiment, a semiconductor device 2300H comprises a first die2312, a second die 2313, a redistribution structure 2337, and aplurality of metal posts 2339. The first die 2312 comprises a processorunit 2338. The second die 2313 is a memory die. The redistributionstructure 2337 comprises a first sublayer 2333 and a second sub layer2334. The first sublayer 2333 comprises a plurality of first vias 2329.The first vias 2329 are cup-shaped. The second sublayer 2334 comprises aplurality of second vias 2330. The second vias 2330 are cup-shaped.

A first subset of the metal posts 2339 is physically connected to thefirst die 2312. A second subset of the metal posts 2339 is physicallyconnected to the second die 2313. The metal posts 2339 are physicallyconnected to the redistribution structure 2337. A first minimum pitch2340 of the first vias 2329 is smaller than a second minimum pitch 2341of the second vias 2330. The first die 2312 is electrically connected tothe second die 2313 through the redistribution structure 2337.

In one example, a height of the metal posts 2339 is between 1 micrometerand 10 micrometer. In one example, a molding material 2335 is filledbetween the the first sublayer 2333 and an active surface of the firstdie 2312. In one example, a molding material 2335 is filled between thethe first sublayer 2333 and an active surface of the second die 2313. Inone example, the first sublayer 2333 comprises polyimide.

In one example, the first sublayer 2333 comprises polybenzoxazole (PBO).In one example, the second sublayer 2334 comprises polyimide. In oneexample, the second sublayer 2334 comprises polybenzoxazole (PBO). Inone example, the redistribution structure 2337 comprises a thirdsublayer 2350 and the third sublayer 2350 comprises third vias 2352.

In one example, the redistribution structure 2337 further comprises afourth sublayer 2351 and the fourth sublayer 2351 comprises fourth vias2353. In one example, the second average pitch 2341 of the second vias2330 is smaller than a third average pitch 2342 of the third vias 2352.In one example, the third average pitch 2342 of the third vias 2352 issmaller than a fourth average pitch 2343 of the fourth vias 2353. In oneexample, the third sublayer 2350 comprises polyimide. In one example,the third sublayer 2350 comprises polybenzoxazole (PBO).

FIG. 24A shows a exemplary via 2400A. FIG. 24B shows an embodiment oftwo dies placed on a redistribution structure. FIG. 24C shows anembodiment of a semiconductor device.

The via 2400A has a rim 2401. The via 2400A comprises an inner portion2403 and an outer portion 2405. The inner portion 2403 has an innerwidth 2407. The inner width 2407 is the largest width of the innerportion 2403. The outer portion 2405 has an outer width 2409. A widthratio is defined as a ratio between the outer width 2409 and the innerwidth 2407. The width ratio is the result of the outer width 2409divided by the inner width 2407. In other words, the outer width 2409 isa numerator and the inner width 2407 is a denominator. The outer portion2405 can have different widths in different locations. In this case, asmallest outer width 2409 is used for the calculation of the widthratio.

In one embodiment, a semiconductor device 2400B comprises a first die2410, a second die 2411, a redistribution structure 2420, and aplurality of metal posts 2429. The first die 2410 comprises a processorunit 2418. The second die 2411 is a memory die. The redistributionstructure 2420 comprises a first sublayer and a second sub layer. Thefirst sublayer 2421 comprises a plurality of first vias 2425. The firstvias 2425 are cup-shaped. The second sublayer 2422 comprises a pluralityof second vias 2426. The second vias 2426 are cup-shaped.

A first subset of the metal posts 2429 is physically connected to thefirst die 2410. A second subset of the metal posts 2429 is physicallyconnected to the second die 2411. The metal posts 2429 are physicallyconnected to the redistribution structure 2420. A first width ratio ofthe first vias 2425 is greater than a second width ratio of the secondvias 2426. The first die 2410 is electrically connected to the seconddie 2411 through the redistribution structure 2420.

In one example, a height of the metal posts 2429 is between 1 micrometerand 10 micrometer. In one example, a molding material 2412 is filledbetween the the first sublayer and an active surface of the first die2410. In one example, a molding material 2412 is filled between the thefirst sublayer 2412 and an active surface of the second die 2411. In oneexample, the first sublayer 2412 comprises polyimide.

In one example, the first sublayer 2412 comprises polybenzoxazole (PBO).In one example, the second sublayer 2422 comprises polyimide. In oneexample, the second sublayer 2422 comprises polybenzoxazole (PBO). Inone example, the redistribution structure 2420 comprises a thirdsublayer 2423 and the third sublayer 2423 comprises third vias 2427.

In one example, the redistribution structure 2420 further comprises afourth sublayer 2424 and the fourth sublayer 2420 comprises fourth vias2428. In one example, the second width ratio of the second vias 2426 isgreater than a third width ratio of the third vias 2427. In one example,the third width ratio of the third vias 2427 is smaller than a fourthwidth ratio of the fourth vias 2428. In one example, the third sublayer2423 comprises polyimide. In one example, the third sublayer 2423comprises polybenzoxazole (PBO).

What is claimed is:
 1. A semiconductor device, comprising: a first die,the first die having an L1 side and an S1 side, the L1 side being longerthan the S1 side, the L1 side being perpendicular to the S1 side, thefirst die comprising L1 connection ends and S1 connection ends, the L1connection ends being disposed on an active surface of the first die,the L1 connection ends being substantially disposed along the L1 side,the S1 connection ends being disposed on the active surface of the firstdie, the S1 connection ends being substantially disposed along the S1side; a second die, the second die having an L2 side and an S2 side, theL2 side being longer than than the S2 side, the L2 side beingperpendicular to the S2 side, the second die comprising a first group ofL2 connection ends, a second group of L2 connection ends, and S2connection ends, the L2 connection ends being substantially disposedalong the L2 side; a molding material covering the first die and thesecond die; and a redistribution structure, the redistribution structurehaving a first group of traces and a second group of traces, the firstgroup of traces being electrically connected between the S1 connectionends and the first group of L2 connection ends, the second group oftraces being electrically connected between the L1 connection ends andthe second group of L2 connection ends; wherein the S1 side is parallelto the S2 side, no solder bumps are located between the first die andthe redistribution structure, and no solder bumps are located betweenthe second die and the redistribution structure.
 2. The semiconductordevice of claim 1, further comprising a first set of metal pillars and asecond set of metal pillars, the first set of metal pillars beingconnected between the first die and the redistribution structure, thesecond set of metal pillars being connected between the second die andthe redistribution structure.
 3. The semiconductor device of claim 1,wherein the first die is a logic die and the second die is a memory die.4. The semiconductor device of claim 3, wherein a subgroup of the secondgroup of traces are assigned as a data bus for transmitting data fromthe memory die.
 5. The semiconductor device of claim 3, wherein at leasttwo traces of the second group of traces are assigned as a pair ofcomplementary data strobe signals.
 6. The semiconductor device of claim1, wherein the first die is a memory die and the second die is a logicdie.
 7. The semiconductor device of claim 6, wherein a subgroup of thesecond group of traces are assigned as a data bus for transmitting datafrom the memory die.
 8. The semiconductor device of claim 6, wherein atleast two traces of the second group of traces are assigned as a pair ofcomplementary data strobe signals.
 9. A semiconductor device,comprising: a first die, the first die having an L1 side and an S1 side,the L1 side being perpendicular to the S1 side, the first die having afirst active surface, the first die comprising an L1 connection area onthe first active surface, the L1 connection area being substantiallyalong the L1 side, the first die comprising an S1 connection area on thefirst active surface, the S1 connection area being substantially alongthe S1 side; a second die, the second die having an L2 side and an S2side, the second die having a second active surface, the second diecomprising an L2 connection area on the second active surface, the L2connection area being substantially along the L2 side, the L1 side beingparallel to the L2 side; and a redistribution structure, theredistribution structure having a first group of traces and a secondgroup of traces, the first group of traces being electrically connectedbetween the S1 connection area and the L2 connection area, the secondgroup of traces being electrically connected between the L1 connectionarea and the L2 connection area; wherein an average length of the secondgroup of traces is shorter than that of the first group of traces, nosolder bumps are located between the first die and the redistributionstructure, and no solder bumps are located between the second die andthe redistribution structure.
 10. The semiconductor device of claim 9,further comprising a molding material covering the first die and thesecond die.
 11. The semiconductor device of claim 9, further comprisinga first set of metal pillars and a second set of metal pillars, thefirst set of metal pillars being connected between the first die and theredistribution structure, the second set of metal pillars beingconnected between the second die and the redistribution structure. 12.The semiconductor device of claim 9, wherein the first die is a logicdie and the second die is a memory die.
 13. The semiconductor device ofclaim 12, wherein a subgroup of the second group of traces are assignedas a data bus for transmitting data from the memory die.
 14. Thesemiconductor device of claim 12, wherein at least two traces of thesecond group of traces are assigned as a pair of complementary datastrobe signals.
 15. The semiconductor device of claim 9, wherein thefirst die is a memory die and the second die is a logic die.
 16. Thesemiconductor device of claim 15, wherein a subgroup of the second groupof traces are assigned as a data bus for transmitting data from thememory die.
 17. The semiconductor device of claim 15, wherein at leasttwo traces of the second group of traces are assigned as a pair ofcomplementary data strobe signals.
 18. A semiconductor device,comprising: a first die, the first die having a first active surface,the first die having an A1 side, an A2 side, an A3 side, and an A4 side,the A1 side being parallel to the A3 side, the A2 side being parallel tothe A4 side, the A2 side being longer than the A1 side, the A1 sidebeing along an A1 axis, the A3 side being along an A3 axis; a seconddie, the second die having a second active surface, the second diehaving a B1 side, a B2 side, a B3 side, and a B4 side, the B1 side beingparallel to the B3 side, the B2 side being parallel to the B4 side, theB2 side being longer than the B1 side, the B1 side being along a B1axis, the B3 side being along a B3 axis; a molding material covering thefirst die and the second die; a redistribution structure; a firstconnection structure, the first active surface being connected to theredistribution structure through the first connection structure; and asecond connection structure, the second active surface being connectedto the redistribution structure through the second connection structure;wherein the A1 axis intersects the second die, the A3 axis does notintersect the second die, the B1 axis does not intersect the first die,and the B3 axis intersects the first die.
 19. A semiconductor device,comprising: a first die, the first die having a first active surface,the first die having an A1 side, an A2 side, an A3 side, and an A4 side,the A1 side being parallel to the A3 side, the A2 side being parallel tothe A4 side, the A2 side being longer than the A1 side, the A1 sidebeing along an A1 axis, the A3 side being along an A3 axis; a seconddie, the second die having a second active surface, the second diehaving a B1 side, a B2 side, a B3 side, and a B4 side, the B1 side beingparallel to the B3 side, the B2 side being parallel to the B4 side, theB2 side being longer than the B1 side, the B1 side being along a B1axis, the B3 side being along a B3 axis; a redistribution structure; afirst connection structure, the first active surface being connected tothe redistribution structure through the first connection structure; anda second connection structure, the second active surface being connectedto the redistribution structure through the second connection structure;wherein the A1 axis intersects the second die, the A3 axis intersectsthe second die, the B1 axis does not intersect the first die, the B3axis does not intersect the first die, no solder bumps are locatedbetween the first die and the redistribution structure, and no solderbumps are located between the second die and the redistributionstructure.
 20. The semiconductor device of claim 19, further comprisinga solder material covering the first die and the second die.